241 Search Results for: “igbt transistors”

TIP42 TIP142C PNP Power Transistor is designed for general–purpose switching and amplifier applications. Collector–Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector–Emitter Sustaining Voltage —...

The BC107 is a small single NPN Transistor is age-old and have been used in low noise and low signal designs. Today a lot of new transistors have come as...

IRFP260N CHANNEL POWER MOSFETVds max=200 V Rds< 0.4 Id =50 A

Max Voltage Collector Emmiter=50 VMax Collector current=150 mA Collector power dissipation =400 mW

These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits.The NPN types are the BD135 and...

The S9014 is an NPN epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuits. Features: High total power dissipation. (PT=450mW)High hFE and good linearityComplementary...

Solar Inverter PCB Board The Local 8 IGBT Solar Inverter PCB Board is a high-performance circuit board designed for solar energy systems and power inverters. Engineered with IGBT technology, it ensures...

Transistor Type: MOSFETTransistor Polarity: N Channel Drain Source Voltage, Vds: 200V Continuous Drain Current, Id: 18A On-Resistance, Rds(on): 150mohm Rds(on) Test Voltage, Vgs: 10V Drain Source On Resistance @ 10V: 150mohm...

IRFZ44N POWER MOSFET Features: Type:Field-Effect Transistor Brand Name: International Rectifier Package Type: Throught Hole Model Number: IRFZ44NPBF TO-220AB: MOSFET N-Channel, Metal Oxide 55V 49A: FETs - Single Mosfet Type :...

The Solar Inverter Heat Sink 8 inch for 8 IGBT is a premium cooling solution designed specifically for solar inverters. This high-quality heat sink ensures that your solar inverters stay...

TC4427A Dual High-Speed MOSFET Driver ICThe TC4427A is a high-performance dual MOSFET driver designed for high-speed switching applications. This versatile IC is ideal for driving power MOSFETs in motor control,...

Features:Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from to 20V Undervoltage lockout 3.3V, 5V and 15V input logic compatible Cross-conduction prevention logic...

75V Single N-Channel HEXFET Power MOSFET is provided in a TO-220AB packageN CHANNEL POWER MOSFET Technical Specifications of IRFB3307 MOSFET: Casing: TO-220 VDSS 75V RDS(on) typ. 5.0m max. 6.3m ID...

Technical Specifications: Casing: TO-220 Voltage(max): 100V I(max): 180A Execution: N-Channel Type: IRFB 4110

The SVG104R5NT N-Channel Power MOSFET is a high-efficiency, fast-switching transistor designed for advanced electronic applications. With its low on-resistance, high voltage capacity, and excellent thermal performance, this MOSFET is perfect...

ULN2803A smd is High-Voltage, High Current Darlington Transistor Arrays is  8 NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital...

Max Voltage Collector Emmiter=50 VMax Collector current=150 mA Collector power dissipation =400 mW

The type was registered by Motorola Semiconductor in the mid-sixties, together with the complementary PNP type 2N3906, and represented a significant performance/cost improvement, with the plastic TO-92 case replacing metal...

This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance , provide superior...

Description:The IR2153 is a high voltage, high speed, self-oscillating power MOSFET and IGBT driver with both high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies...

DESCRIPTIONThird generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred...

Features:Floating channel designed for bootstrap operationFully operational to 600VTolerant to negative transient voltagedV/dt immuneGate drive supply range from 10 to 20VUndervoltage lockout3.3V, 5V and 15V logic compatibleCross-conduction prevention logicMatched propagation...

SpecificationValue Family IRF740 Channel Mode Enhancement Channel Type N Maximum Continuous Drain Current 10A Maximum Drain Source Resistance 0.55Ohm@10V Maximum Drain Source Voltage 400V Category Power MOSFET Maximum Gate Source...

FEATURESDynamic dV/dt Rating Repetitive Avalanche Rated P-Channel 175 C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC