1000 Search Results for: “igbt transistors”

DESCRIPTIONThird generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred...

VDSS = 200V RDS(on) = 0.075 ID = 30A

VDSS =100VRDS(on) = 0.023 ID = 57A

Max Voltage Collector Emmiter=50 VMax Collector current=150 mA Collector power dissipation =400 mW

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three groups Q, R and S according to their DC current gain. On special...

The driver uses high-power driver chip BTS7960 composed of H bridge driver module, with over-temperature over-current protection. BTS7960 H bridge driver circuit, with strong drive and brake effects, the use...

DESCRIPTIONThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for...

HY1920 MOSFET - High-Performance N-Channel Power Transistor The HY1920 MOSFET is a robust, high-efficiency N-Channel MOSFET, ideal for power applications requiring high current and voltage capabilities. It features a 200V drain-to-source voltage...

S9018 Transistor J8 NPN 18V 50mA 200mW TO-92 The S9018 is a general-purpose NPN bipolar junction transistor designed for low-power amplification and switching circuits. With a maximum collector current of...

2SC5200 NPN Power Transistor  is Designed for general purpose power amplifier and switching applications. This is suitable transistor for high power audio amplifiers.Specifications High Fidelity Audio Frequency Amplifier Output Low...

HY3215 MOSFET | High-Efficiency N-Channel Power Transistor   ( REFURB ) The HY3215 MOSFET  ( REFURB ) is a high-performance N-channel power transistor designed to provide fast switching, high efficiency, and reliable performance. It is...

Description The 70S360P7 is a high-voltage N-channel power MOSFET manufactured by Infineon Technologies, belonging to their 700V CoolMOS™ P7 superjunction technology series. Designed for high-efficiency power conversion, it features a maximum...

S9018 NPN Transistor J8 TO-92 — Low-Power General Purpose Amplifier & SwitchThe S9018 is a widely used NPN bipolar junction transistor (BJT) in a compact TO-92 through-hole package. It is...

Specifications Technical parameters of Transistor 40N10 MOS-N-FET 100 V, 40 A, 0.04 Ohm, 160 W, TO220 Transistor type: N-MOSFET Maximum voltage drain-source Uds: 100 [V] Maximum drain current: 40 [A]...

DescriptionMarked "045N10N" on the package with Infineon's logo, this is Infineon's IPP045N10N3G (also available as IPB045N10N3G/IPI045N10N3G variants), part of their OptiMOS3 power transistor family. It's an N-channel MOSFET built for...

UNI-T UT603 — handheld inductance and capacitance (LC) meter that tests resistors, capacitors and inductors and also measures transistor parameters (hFE). Ideal for electronics repair, coil and transformer work, education,...

Features:Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from to 20V Undervoltage lockout 3.3V, 5V and 15V input logic compatible Cross-conduction prevention logic...

IRF3205 N CHANNEL POWER MOSFETVDSS = 55VRDS(on) = 8.0mID = 110A

75V Single N-Channel HEXFET Power MOSFET is provided in a TO-220AB packageN CHANNEL POWER MOSFET Technical Specifications of IRFB3307 MOSFET: Casing: TO-220 VDSS 75V RDS(on) typ. 5.0m max. 6.3m ID...

CTC 313 TRANSISTOR IS NOW AVAIBLE IN PAKSITAN

IRFP260N CHANNEL POWER MOSFETVds max=200 V Rds< 0.4 Id =50 A

Technical Specifications: Casing: TO-220 Voltage(max): 100V I(max): 180A Execution: N-Channel Type: IRFB 4110

DESCRIPTIONThe UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.