241 Search Results for: “igbt transistors”

Type Designator: TIP102The material of Transistor is Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 80 W Maximum Collector-Base Voltage |Vcb|: 100 V Maximum Collector-Emitter Voltage |Vce|: 100 V Maximum...

The IR2101 is a high voltage, high speed MOSFET and IGBT driver IC. It features independent high and low side referenced output channels, making it suitable for various power applications like motor...

This MOSFET is used in the conditionPackage Includes: 1 x GP 4063D Mosfet

CTC 313 TRANSISTOR IS NOW AVAIBLE IN PAKSITAN

📝 Product Description The IRLZ34N is a logic-level N-Channel MOSFET designed for high-efficiency switching and amplification in low-voltage circuits. With a drain current of 30A, low RDS(on) of 35mΩ, and...

The MJ13009 Transistor is a high-performance, NPN power transistor widely used in power switching applications, inverters, and amplifiers. Designed for reliability, the MJ13009 transistor ensures efficient performance in high-current and...

IRFB 4115 Power MOSFET N channel

NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed high-voltage switching, and is ideal for use as a driver in devices...

FEATURES• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs...

Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A Power -...

TIP142 NPN DARLINGTON TRANSISTOR IN PAKISTANMax Voltage Collector Emmiter=100V Max Collector current =10A

VDSS = 200V RDS(on) = 0.075 ID = 30A

Characteristics of 2SC2625 Transistor Type - NPN Collector-Emitter Voltage: 400 V Collector-Base Voltage: 450 V Emitter-Base Voltage: 7 V Collector Current: 10 A Collector Dissipation - 80 W DC Current Gain (hfe) - 10 Operating and Storage Junction Temperature Range -55 to +150 °C...

Features Collector-Emitter Volt (Vceo): 50V Collector-Base Volt (Vcbo): 50V Collector Current (Ic): 0.15A hfe: 60-600 @ 1mA Power Dissipation (Ptot): 625mW Current-Gain-Bandwidth (ftotal): 60MHz Type: PNP

This is IRF540N MOSFET N Channel Transistor  Hexfet Power Mosfet type. This is a general purpose and Specifications: Drain-Source Volt (Vds): 100V Drain-Gate Volt (Vdg): 100V Gate-Source Volt (Vgs): 20V Drain...

General purpose Silicon NPN transistorUsed for switching and amplification purposes is available in Pakistan.  The NPN transistor is geared towards passing electrons from the emitter to the collector (so that...

Features and Technical Specifications Type: p-n-p Power Dissipation: 0.4watts High voltage and High current: Vceo = 50v and Ic = 150mA Low Noise: 1dB Case Material: molded plastic Collector power...

Max Voltage Collector Emmiter=100VMax Collector current=5A

ULN2803A IC IN PAKISTAN8 channels . Applications. Motor driver relay driver Led lights driver Switching Driving printer hammers Industrial Equipment Printers Features Output current (single output) 500 mA (max) High...

The TIP127 is a PNP type Darlington pair transistor. It is manufactured for universal drive amplifications and less velocity swapping submissions. It is existing in TO-220 kind of cascading. Its...

The BC557 PNP Transistor is a versatile, general-purpose transistor widely used in switching and amplification applications by wide range of users mostly students. With its low noise and high performance,...

The power transistor is a three-terminal semiconductor device used to amplify and switch electronic signals and electrical power. It is a junction transistor designed to handle high current and power;...

IRF3205 N CHANNEL POWER MOSFETVDSS = 55VRDS(on) = 8.0mID = 110A