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Used FGA50N100BNTD2 – 1000 V, 50 A NPT Trench IGBT with Built-in Fast Diode, TO‑3P Package-hallroadlahore.pk
FGA50N100BNTD2 – 1000 V, 50 A NPT Trench IGBT with Built-in Fast Diode, TO‑3P Package Product Description: The FGA50N100BNTD2 is a high-performance 1000V, 50A N-channel Insulated Gate Bipolar Transistor (IGBT) designed for...
75A 1200V IGBT Module
High-Power Switching Solution for Industrial Applications The 75A 1200V IGBT Module always delivers fast, efficient, and reliable power switching. First, it handles high-speed switching with ease. Then, it reduces conduction...
MOSFET IGBT Driver TLP250
Pin configuration isolated MOSFET driver TL250The pin layout of TLP250 is given below. It is clearly shown in the figure that led at the input stage and photodetector diode at...
IGBT Tester
This IGBT Tester is a practical and convenient tool designed for professionals involved in the manufacturing of local solar inverters. It provides a straightforward method for testing Insulated Gate Bipolar...
IGBT Fitting
This IGBT fitting is designed for the secure mounting and heat dissipation of Insulated-Gate Bipolar Transistors in power electronics applications. It provides the necessary physical interface to ensure stable electrical...
BUT11AF HIGH POWER NPN TRANSISTOR IN PAKISTAN
Rs.1,862
The BUT11AF was designed for use in line operated switching power supplies in awide range of end use applications. This device combines the latest state of the art bipolar fabrication...
60N60FD1 MOSFET - 600V 60A N-channel Power Transistor
60N60FD1 MOSFET - 600V 60A N-Channel Power Transistor The 60N60FD1 is a high-performance 600V 60A N-Channel MOSFET, optimized for power conversion, switching applications, and industrial automation. With low RDS(on) and high-speed switching...
ULN2803A SMD Hi-voltage Current Darlington Transistor Array
ULN2803A smd is High-Voltage, High Current Darlington Transistor Arrays is 8 NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital...
TIP127 PNP Medium-power Complementary Silicon Transistors
The TIP127 is a PNP type Darlington pair transistor. It is manufactured for universal drive amplifications and less velocity swapping submissions. It is existing in TO-220 kind of cascading. Its...
TIP147 PNP Power Transistor
Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A Power -...
MJE13003G 700V 1.5A NPN Power Transistor
Description Marked "MJE13003G" on the package with UTC's logo, this is Unisonic Technologies' (UTC) MJE13003G (a variant of the 13003 family), a high-voltage, high-speed NPN silicon power bipolar junction transistor...
IR2110 MOSFET & IGBT DRIVER IC
Rs.343
IR2110 / ir 2110 MOSFET & IGBT DRIVER ICFEATURES: Floating channel designed for bootstrap operation Fully operational to 500V or 600V Tolerant to negative transient voltage dV/dt immune Gate drive...
IR2153 IC Self-oscillating Half-bridge Driver
Description:The IR2153 is a high voltage, high speed, self-oscillating power MOSFET and IGBT driver with both high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies...
J13009 Transistor
The J13009 is a high-voltage, high-speed power switching transistor commonly used in power supply circuits and electronic ballasts. This component is designed for use in switching applications that require robust...
TIP142 NPN Darlington Transistor
TIP142 NPN DARLINGTON TRANSISTOR IN PAKISTANMax Voltage Collector Emmiter=100V
Max Collector current =10A
2SA683 PNP Transistor
Characteristics of 2SA683 Transistor Type: PNP Collector-Emitter Voltage, max: -25 V Collector-Base Voltage, max: -30 V Emitter-Base Voltage, max: -5 V Collector Current − Continuous, max: -1 A Collector Dissipation: 1 W DC Current Gain (hfe): 85 to 340 Transition Frequency, min: 200 MHz Operating and...
TIP42 TIP142C PNP Power Transistor
TIP42 TIP142C PNP Power Transistor is designed for general–purpose switching and amplifier applications. Collector–Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector–Emitter Sustaining Voltage —...
2SC2625 Transistor
Characteristics of 2SC2625 Transistor Type - NPN Collector-Emitter Voltage: 400 V Collector-Base Voltage: 450 V Emitter-Base Voltage: 7 V Collector Current: 10 A Collector Dissipation - 80 W DC Current Gain (hfe) - 10 Operating and Storage Junction Temperature Range -55 to +150 °C...
S9014 TRANSISTOR NPN
Rs.20
The S9014 is an NPN epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuits. Features: High total power dissipation. (PT=450mW)High hFE and good linearityComplementary...
TIP102 NPN Transistor
Type Designator: TIP102The material of Transistor is Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 80 W Maximum Collector-Base Voltage |Vcb|: 100 V Maximum Collector-Emitter Voltage |Vce|: 100 V Maximum...
IR2101 High And Low Side Driver IC
The IR2101 is a high voltage, high speed MOSFET and IGBT driver IC. It features independent high and low side referenced output channels, making it suitable for various power applications like motor...