1000 Search Results for: “IGBT transistors”

Description The 70S360P7 is a high-voltage N-channel power MOSFET manufactured by Infineon Technologies, belonging to their 700V CoolMOS™ P7 superjunction technology series. Designed for high-efficiency power conversion, it features a maximum...

The SN74HC245N octal bus transceivers are designed for asynchronous two-way communication between data buses. The control-function implementation minimizes external timing requirements.The devices allow data transmission from the A bus to the B bus or from the...

DESCRIPTIONThe UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.

Features:Floating channel designed for bootstrap operationFully operational to 600VTolerant to negative transient voltagedV/dt immuneGate drive supply range from 10 to 20VUndervoltage lockout3.3V, 5V and 15V logic compatibleCross-conduction prevention logicMatched propagation...

IRF3205 N CHANNEL POWER MOSFETVDSS = 55VRDS(on) = 8.0mID = 110A

SpecificationValue Family IRF740 Channel Mode Enhancement Channel Type N Maximum Continuous Drain Current 10A Maximum Drain Source Resistance 0.55Ohm@10V Maximum Drain Source Voltage 400V Category Power MOSFET Maximum Gate Source...

UNI-T UT603 — handheld inductance and capacitance (LC) meter that tests resistors, capacitors and inductors and also measures transistor parameters (hFE). Ideal for electronics repair, coil and transformer work, education,...

TL081 DIP-8 TL081CP IC JFET Input Operational Amplifier JFET-input operational amplifier family is designed to offer a wider selection than any previously developed operational amplifier family. Each of these JFET-input...

FEATURESDynamic dV/dt Rating Repetitive Avalanche Rated P-Channel 175 C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC

The 24N60M2 N-Channel Power MOSFET is a high-performance, fast-switching transistor designed for power electronics applications. With a 600V drain-source voltage and 24A continuous current, it delivers exceptional efficiency and reliability...

DescriptionMarked "K31A60W" on the package with Toshiba's logo (the "T" prefix is dropped in the on-body marking), this is Toshiba's TK31A60W, an N-channel MOSFET rated 600V with an on-resistance of...

TOSHIBA TB6560AHQ PDFThe TB6560AHQ/AFG is a PWM chopper-type stepping motor driver IC designed for sinusoidal-input microstep control of bipolar stepping motors. The TB6560AHQ/AFG can be used in applications that require...

DescriptionMarked "K17A80W" on the package with Toshiba's logo (the "T" prefix is dropped in the on-body marking), this is Toshiba's TK17A80W, an N-channel MOSFET rated 800V with an on-resistance of...

Description Marked "ICE3BR1765J" on the package with Infineon's logo, this is Infineon's ICE3BR1765J, an off-line Switched-Mode Power Supply (SMPS) current-mode PWM controller with an integrated 650V CoolMOS® MOSFET (part of...

Description This is another high-power electronic switch component (MOSFET), very similar in purpose to the K065N65Z shown earlier — used to control and switch high voltage/current in power electronics circuits....

GENERAL DESCRIPTION ■ PACKAGE OUTLINEThe NJM2606/06A are integrated circuits with wide operating supply voltage range for DC motor speed control. Especially, the NJM2606A is suited for the applications requiring low...

9N90 MOSFET | High Voltage N-Channel Power Transistor for Efficient Switching Applications The 9N90 MOSFET is a high-performance N-channel power transistor designed to handle high voltages with efficiency. It is widely used...

Description: This is an electronic component called a MOSFET — think of it as a high-power electronic switch. It's used inside circuits to turn power on/off very quickly and control...

Description Marked "K40A10N1" on the package with Toshiba's logo, this is Toshiba's TK40A10N1, part of their U-MOS IV power transistor series. It is an N-channel enhancement mode MOSFET built in...