1000 Search Results for: “IGBT transistors”

Max Voltage Collector Emmiter=100VMax Collector current=5A

The Nell IRF260 is a three-terminal silicon devicewith current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4...

FEATURES• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs...

BC558 is a PNP transistor hence the collector and emitter will be closed (Forward biased) when the base pin is held at ground and will be opened (Reverse biased) when a signal is...

2N2222A Bipolar Junction NPN Transistor is commonly used in general-purpose low-power amplifying/switching applications. Bipolar Junction NPN Transistor is designed for low to medium current, low power, medium voltage, and can...

2SC1383 NPN TRANSISTORCharacteristics 2SC1383 bipolar transistor Type -n-p-n Collector-Emitter Voltage:25V Collector-Base Voltage:30V Emitter-Base Voltage:5?V Collector Current:1A Collector Dissipation -1W DC Current Gain (hfe) -85to?340 Transition Frequency -200MHz Operating and Storage...

2N3055 is a general purpose NPN power transistor manufactured with the epitaxial base process, mounted in a hermetically sealed metal case. The device is designed for general purpose switching and amplifier applications.  2N3055...

IRFZ44N POWER MOSFET Features: Type:Field-Effect Transistor Brand Name: International Rectifier Package Type: Throught Hole Model Number: IRFZ44NPBF TO-220AB: MOSFET N-Channel, Metal Oxide 55V 49A: FETs - Single Mosfet Type :...

HY3215 TO‑247 MOSFET Transistor delivers 150 V and 130 A continuous current with ultra-low RDS(on) of ~0.014 Ω. This makes the HY3215 ideal for industrial inverters, welding machines, motor drivers, and high-efficiency DC-DC...

Type of transistor PNP Polarisation bipolar Collector-emitter voltage 160V Collector current 12A Power 0.1kW Mounting THT Frequency 15MHz

General purpose Silicon NPN transistor Used for switching and amplification purpose.

General purpose Silicon NPN transistor Used for switching and amplification purpose.

A tip142 transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Bipolar NPN Transistor  is composed of semiconductor material usually with at least three...

This is IRF540N MOSFET N Channel Transistor  Hexfet Power Mosfet type. This is a general purpose and Specifications: Drain-Source Volt (Vds): 100V Drain-Gate Volt (Vdg): 100V Gate-Source Volt (Vgs): 20V Drain...

The power transistor is a three-terminal semiconductor device used to amplify and switch electronic signals and electrical power. It is a junction transistor designed to handle high current and power;...

s855 Transistor in Pakistan

Transistor Type: MOSFETTransistor Polarity: N Channel Drain Source Voltage, Vds: 200V Continuous Drain Current, Id: 18A On-Resistance, Rds(on): 150mohm Rds(on) Test Voltage, Vgs: 10V Drain Source On Resistance @ 10V: 150mohm...

IRFB 4115 Power MOSFET N channel

Description:The 800R4S0 Power MOSFET N-Channel is a reliable, high-speed switching transistor designed for efficient power conversion and control. Ideal for use in power supplies, inverters, motor drivers, and switching circuits,...

VDSS = 200V RDS(on) = 0.075 ID = 30A

Max Voltage Collector Emmiter=50 VMax Collector current=150 mA Collector power dissipation =400 mW

DESCRIPTIONThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for...

IRFP450 N CHANNEL POWER MOSFETVds max=500 V Rds< 0.4 Id =14 A