1000 Search Results for: “IGBT transistors”

IRFB 4115 Power MOSFET N channel

CTC 313 TRANSISTOR IS NOW AVAIBLE IN PAKSITAN

DESCRIPTIONThird generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred...

This assembled local 8 IGBT inverter PCB board is designed for power conversion applications. It comes fully populated with the necessary components to facilitate inverter functionality. Features of this inverter...

📝 Product Description The NCEP15T14 MOSFET is a powerful, high-performance N-channel enhancement-mode transistor designed for both low and high-power switching applications. With a maximum voltage rating of 150V, this compact...

Features:Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from to 20V Undervoltage lockout 3.3V, 5V and 15V input logic compatible Cross-conduction prevention logic...

The 6N136 is a 1-channel 8-pin high speed Transistor Optocoupler consists of an AlGaAs LED optically coupled to a high speed photodetector transistor for each channel. A separate connection for...

Max Voltage Collector Emmiter=50 VMax Collector current=150 mA Collector power dissipation =400 mW

VDSS =100VRDS(on) = 0.023 ID = 57A

75V Single N-Channel HEXFET Power MOSFET is provided in a TO-220AB packageN CHANNEL POWER MOSFET Technical Specifications of IRFB3307 MOSFET: Casing: TO-220 VDSS 75V RDS(on) typ. 5.0m max. 6.3m ID...

2SC5200 NPN Power Transistor  is Designed for general purpose power amplifier and switching applications. This is suitable transistor for high power audio amplifiers.Specifications High Fidelity Audio Frequency Amplifier Output Low...

IRFP260N CHANNEL POWER MOSFETVds max=200 V Rds< 0.4 Id =50 A

HY3215 MOSFET | High-Efficiency N-Channel Power Transistor   ( REFURB ) The HY3215 MOSFET  ( REFURB ) is a high-performance N-channel power transistor designed to provide fast switching, high efficiency, and reliable performance. It is...

HY1920 MOSFET - High-Performance N-Channel Power Transistor The HY1920 MOSFET is a robust, high-efficiency N-Channel MOSFET, ideal for power applications requiring high current and voltage capabilities. It features a 200V drain-to-source voltage...

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three groups Q, R and S according to their DC current gain. On special...

Specifications Technical parameters of Transistor 40N10 MOS-N-FET 100 V, 40 A, 0.04 Ohm, 160 W, TO220 Transistor type: N-MOSFET Maximum voltage drain-source Uds: 100 [V] Maximum drain current: 40 [A]...

S9018 Transistor J8 NPN 18V 50mA 200mW TO-92 The S9018 is a general-purpose NPN bipolar junction transistor designed for low-power amplification and switching circuits. With a maximum collector current of...

This MOSFET is used in the conditionPackage Includes: 1 x GP 4063D Mosfet

The D92 02 is a diode MOSFET transistor rated for 220V operation. This component is supplied as a used item, suitable for repair work or replacement in compatible electronic circuits....

DescriptionMarked "045N10N" on the package with Infineon's logo, this is Infineon's IPP045N10N3G (also available as IPB045N10N3G/IPI045N10N3G variants), part of their OptiMOS3 power transistor family. It's an N-channel MOSFET built for...

Functions: RF1404 - ORIGINAL - IR  VOLTAGE - 40V  CURRENT - 190A  RDS_ON - 3.7m Ohm  ENCAPSULATION - TO220  Component widely used in sources of amplifiers of brands:  DB Sound...

S9018 NPN Transistor J8 TO-92 — Low-Power General Purpose Amplifier & SwitchThe S9018 is a widely used NPN bipolar junction transistor (BJT) in a compact TO-92 through-hole package. It is...