686 Search Results for: “transistors”

Q200V75SDB1 IGBT Module – 200A 750V The Q200V75SDB1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for efficient power switching applications. With a 200A Current rating and 750v voltage...

Characteristics of 2SA683 Transistor Type: PNP Collector-Emitter Voltage, max: -25 V Collector-Base Voltage, max: -30 V Emitter-Base Voltage, max: -5 V Collector Current − Continuous, max: -1 A Collector Dissipation: 1 W DC Current Gain (hfe): 85 to 340 Transition Frequency, min: 200 MHz Operating and...

Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A Power -...

K75T60 IGBT - 600V 75A High-Power IGBT The K75T60 is a high-efficiency 600V 75A IGBT, designed for power switching, motor control, and industrial automation. With a low saturation voltage (Vce(sat)) and high-speed...

ULN2803A IC IN PAKISTAN8 channels . Applications. Motor driver relay driver Led lights driver Switching Driving printer hammers Industrial Equipment Printers Features Output current (single output) 500 mA (max) High...

Type of transistor PNP Polarisation bipolar Collector-emitter voltage 160V Collector current 12A Power 0.1kW Mounting THT Frequency 15MHz

Max Voltage Collector Emmiter=50 VMax Collector current=150 mA Collector power dissipation =400 mW

This MOSFET is used in the conditionPackage Includes: 1 x GP 4063D Mosfet

The K75EEH5 IGBT is a 600V Insulated Gate Bipolar Transistor (IGBT) engineered to deliver high switching efficiency and robust performance for various industrial applications. With a current rating of 75A,...

The  is a Insulated Gate Bipolar Transistor (IGBT) housed in a TO-247PLUS package. This component is designed for high-speed switching applications, offering low conduction and switching losses. Key Specifications: Collector-Emitter...

G60N60 IGBT - High-Performance Transistor for Industrial Power Systems The G60N60 IGBT is a high-efficiency insulated-gate bipolar transistor designed for demanding power applications. With a voltage rating 600V and a current capacity...

This is IRF540N MOSFET N Channel Transistor  Hexfet Power Mosfet type. This is a general purpose and Specifications: Drain-Source Volt (Vds): 100V Drain-Gate Volt (Vdg): 100V Gate-Source Volt (Vgs): 20V Drain...

The S9014 is an NPN epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuits. Features: High total power dissipation. (PT=450mW)High hFE and good linearityComplementary...

📝 Product Description The IRLZ34N is a logic-level N-Channel MOSFET designed for high-efficiency switching and amplification in low-voltage circuits. With a drain current of 30A, low RDS(on) of 35mΩ, and...

The 6N136 is a 1-channel 8-pin high speed Transistor Optocoupler consists of an AlGaAs LED optically coupled to a high speed photodetector transistor for each channel. A separate connection for...

The ULN2003 is an array of seven NPN Darlington transistors capable of 500mA, 50V output. ULN2003 features are common-cathode flyback diodes for switching inductive loads. It can come in PDIP, SOIC,...

60A 1000V IGBT G60N100 NPT Trench IGBT with Soft Recovery Diode, TO-264 Package 🧩 Product Description The FGL60N100BNTD, also known as G60N100, is a high-voltage, high-current NPT trench IGBT (Insulated...

K40T120 IGBT: A Powerful and Versatile Solution The K40T120 IGBT (Insulated Gate Bipolar Transistor) is a high-performance power semiconductor designed to meet the demands of modern power electronics applications. With...

The S9012 is a common PNP bipolar junction transistor used for general-purpose switching and amplification in electronic circuits. This component is suitable for various hobbyist and professional electronics projects requiring...

HY3215 TO‑247 MOSFET Transistor delivers 150 V and 130 A continuous current with ultra-low RDS(on) of ~0.014 Ω. This makes the HY3215 ideal for industrial inverters, welding machines, motor drivers, and high-efficiency DC-DC...

Product Name: CRMicro G40T120 IGBT TransistorBrand: CRMicro Description:The G40T120 is a high-performance IGBT (Insulated Gate Bipolar Transistor) from CRMicro, designed for fast switching and high-efficiency power applications. With a collector-emitter...

High-Power Switching Solution for Industrial Applications The 75A 1200V IGBT Module always delivers fast, efficient, and reliable power switching. First, it handles high-speed switching with ease. Then, it reduces conduction...