1000 Search Results for: “transistors”

General purpose Silicon NPN transistorUsed for switching and amplification purposes is available in Pakistan.  The NPN transistor is geared towards passing electrons from the emitter to the collector (so that...

ULN2803A smd is High-Voltage, High Current Darlington Transistor Arrays is  8 NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital...

2N2222A Bipolar Junction NPN Transistor is commonly used in general-purpose low-power amplifying/switching applications. Bipolar Junction NPN Transistor is designed for low to medium current, low power, medium voltage, and can...

The TIP127 is a PNP type Darlington pair transistor. It is manufactured for universal drive amplifications and less velocity swapping submissions. It is existing in TO-220 kind of cascading. Its...

The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. It is designed for low electric current and power and medium...

The type was registered by Motorola Semiconductor in the mid-sixties, together with the complementary PNP type 2N3906, and represented a significant performance/cost improvement, with the plastic TO-92 case replacing metal...

The BC557 PNP Transistor is a versatile, general-purpose transistor widely used in switching and amplification applications by wide range of users mostly students. With its low noise and high performance,...

BC558 is a PNP transistor hence the collector and emitter will be closed (Forward biased) when the base pin is held at ground and will be opened (Reverse biased) when a signal is...

General purpose Silicon NPN transistor Used for switching and amplification purpose.

TIP41C - PNP Power Transistors  is designed for general–purpose switching and amplifier applications. Collector–Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector–Emitter Sustaining Voltage —...

Characteristics of 2SA683 Transistor Type: PNP Collector-Emitter Voltage, max: -25 V Collector-Base Voltage, max: -30 V Emitter-Base Voltage, max: -5 V Collector Current − Continuous, max: -1 A Collector Dissipation: 1 W DC Current Gain (hfe): 85 to 340 Transition Frequency, min: 200 MHz Operating and...

Type Designator: TIP102The material of Transistor is Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 80 W Maximum Collector-Base Voltage |Vcb|: 100 V Maximum Collector-Emitter Voltage |Vce|: 100 V Maximum...

TIP142 NPN DARLINGTON TRANSISTOR IN PAKISTANMax Voltage Collector Emmiter=100V Max Collector current =10A

These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits.The NPN types are the BD135 and...

2N3055 is a general purpose NPN power transistor manufactured with the epitaxial base process, mounted in a hermetically sealed metal case. The device is designed for general purpose switching and amplifier applications.  2N3055...

Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A Power -...

The J13009 is a high-voltage, high-speed power switching transistor commonly used in power supply circuits and electronic ballasts. This component is designed for use in switching applications that require robust...

NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed high-voltage switching, and is ideal for use as a driver in devices...

Features and Technical Specifications Type: p-n-p Power Dissipation: 0.4watts High voltage and High current: Vceo = 50v and Ic = 150mA Low Noise: 1dB Case Material: molded plastic Collector power...

Description Marked "MJE13003G" on the package with UTC's logo, this is Unisonic Technologies' (UTC) MJE13003G (a variant of the 13003 family), a high-voltage, high-speed NPN silicon power bipolar junction transistor...

TIP122 TIP 122 NPN Darlington transistorTIP122 NPN Darlington transistorMax Voltage Collector Emmiter=100VMax Collector current =5A (8A SURGE)Collector power dissipation =1250 mW

SS8050 NPN Transistor (SOT-23 / Y1) — Pakistani students, engineers, aur hobbyists ke liye ek reliable, low-cost SMD switching transistor jo signal amplification aur switching circuits mein use hota hai....

TIP42 TIP142C PNP Power Transistor is designed for general–purpose switching and amplifier applications. Collector–Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector–Emitter Sustaining Voltage —...