1000 Search Results for: “transistors”

IGBT G40T120BK3SD – High-Performance Power Transistor The IGBT G40T120BK3SD is a high-power Insulated Gate Transistor (IGBT). First, it supports 1200V and 40A applications, making it perfect for demanding tasks. Next,...

G60N100 IGBT: A Powerful and Versatile Solution The G60N100 IGBT (Insulated Gate Bipolar Transistor) is a high-performance power semiconductor designed to meet the demands of modern power electronics applications. With...

This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and use s an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability....

s855 Transistor in Pakistan

G75H120DF1 IGBT - 75A 1200V High-Efficiency Power Transistor The G75H120DF1 is a high-performance 75A, 1200V (IGBT) designed for efficient power conversion and high-speed switching applications. It is widely used in motor drives,...

Characteristics of 2SC2625 Transistor Type - NPN Collector-Emitter Voltage: 400 V Collector-Base Voltage: 450 V Emitter-Base Voltage: 7 V Collector Current: 10 A Collector Dissipation - 80 W DC Current Gain (hfe) - 10 Operating and Storage Junction Temperature Range -55 to +150 °C...

2SC1383 NPN TRANSISTORCharacteristics 2SC1383 bipolar transistor Type -n-p-n Collector-Emitter Voltage:25V Collector-Base Voltage:30V Emitter-Base Voltage:5?V Collector Current:1A Collector Dissipation -1W DC Current Gain (hfe) -85to?340 Transition Frequency -200MHz Operating and Storage...

SS8550 Y2 PNP SMD Transistor SOT-23 — Pakistani students, engineers, aur hobbyists ke liye ek reliable, low-cost switching transistor jo tight spaces mein bhi fit ho jata hai! Specifications Field...

Max Voltage Collector Emmiter=100VMax Collector current=5A

The power transistor is a three-terminal semiconductor device used to amplify and switch electronic signals and electrical power. It is a junction transistor designed to handle high current and power;...

KGF75N65 IGBT – 650V, 75A, TO-247 Package The KGF75N65 (also marked as 75N65KDF or KGF75N65KDF) is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for fast switching and high-efficiency power...

G60N60 IGBT - High-Performance Transistor for Industrial Power Systems The G60N60 IGBT is a high-efficiency insulated-gate bipolar transistor designed for demanding power applications. With a voltage rating 600V and a current capacity...

S9018 Transistor J8 NPN 18V 50mA 200mW TO-92 The S9018 is a general-purpose NPN bipolar junction transistor designed for low-power amplification and switching circuits. With a maximum collector current of...

The MJ13009 Transistor is a high-performance, NPN power transistor widely used in power switching applications, inverters, and amplifiers. Designed for reliability, the MJ13009 transistor ensures efficient performance in high-current and...

CTC 313 TRANSISTOR IS NOW AVAIBLE IN PAKSITAN

Bipolar NPN Transistor is an age-old Japanese Bipolar audio frequency NPN transistor. 2SC945 50V NPN transistor has a decent gain value (hfe) of maximum 700 and is highly linear. Hence this...

HY3215 TO‑247 MOSFET Transistor delivers 150 V and 130 A continuous current with ultra-low RDS(on) of ~0.014 Ω. This makes the HY3215 ideal for industrial inverters, welding machines, motor drivers, and high-efficiency DC-DC...

2N3055 is a general purpose NPN power transistor manufactured with the epitaxial base process, mounted in a hermetically sealed metal case. The device is designed for general purpose switching and amplifier applications.  2N3055...

Features Collector-Emitter Volt (Vceo): 50V Collector-Base Volt (Vcbo): 50V Collector Current (Ic): 0.15A hfe: 60-600 @ 1mA Power Dissipation (Ptot): 625mW Current-Gain-Bandwidth (ftotal): 60MHz Type: PNP

General purpose Silicon NPN transistor Used for switching and amplification purpose.

This is IRF540N MOSFET N Channel Transistor  Hexfet Power Mosfet type. This is a general purpose and Specifications: Drain-Source Volt (Vds): 100V Drain-Gate Volt (Vdg): 100V Gate-Source Volt (Vgs): 20V Drain...

The S9012 is a common PNP bipolar junction transistor used for general-purpose switching and amplification in electronic circuits. This component is suitable for various hobbyist and professional electronics projects requiring...

Type of transistor PNP Polarisation bipolar Collector-emitter voltage 160V Collector current 12A Power 0.1kW Mounting THT Frequency 15MHz

Max Voltage Collector Emmiter=50 VMax Collector current=150 mA Collector power dissipation =400 mW