1000 Search Results for: “Transistor”

Features Collector-Emitter Volt (Vceo): 50V Collector-Base Volt (Vcbo): 50V Collector Current (Ic): 0.15A hfe: 60-600 @ 1mA Power Dissipation (Ptot): 625mW Current-Gain-Bandwidth (ftotal): 60MHz Type: PNP

G60N60 IGBT - High-Performance Transistor for Industrial Power Systems The G60N60 IGBT is a high-efficiency insulated-gate bipolar transistor designed for demanding power applications. With a voltage rating 600V and a current capacity...

The K75EEH5 IGBT is a 600V Insulated Gate Bipolar Transistor (IGBT) engineered to deliver high switching efficiency and robust performance for various industrial applications. With a current rating of 75A,...

DESCRIPTION·With TO-220 package ·Complement to type 2SA473 ·Collector current :IC=3A ·Collector dissipation:PC=10W@TC=25? APPLICATIONS ·Low frequency power amplifier ·Power regulator PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3...

The S9014 is an NPN epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuits. Features: High total power dissipation. (PT=450mW)High hFE and good linearityComplementary...

Max Voltage Collector Emmiter=50 VMax Collector current=150 mA Collector power dissipation =400 mW

Type of transistor PNP Polarisation bipolar Collector-emitter voltage 160V Collector current 12A Power 0.1kW Mounting THT Frequency 15MHz

60A 1000V IGBT G60N100 NPT Trench IGBT with Soft Recovery Diode, TO-264 Package 🧩 Product Description The FGL60N100BNTD, also known as G60N100, is a high-voltage, high-current NPT trench IGBT (Insulated...

The 6N136 is a 1-channel 8-pin high speed Transistor Optocoupler consists of an AlGaAs LED optically coupled to a high speed photodetector transistor for each channel. A separate connection for...

IC NPN Transistor D1071 2SD107

Versatile Tester: FNIRSI LCR-P1 measures transistors, capacitors, resistors, inductors, diodes, MOSFETs, and batteries. User-Friendly Design: Features a replaceable patch seat, 1.44-inch color screen, 300mAh battery, and Type-C charging/data port. Anti-Burn...

Bipolar NPN Transistor is an age-old Japanese Bipolar audio frequency NPN transistor. 2SC945 50V NPN transistor has a decent gain value (hfe) of maximum 700 and is highly linear. Hence this...

2SC5200 NPN Power Transistor  is Designed for general purpose power amplifier and switching applications. This is suitable transistor for high power audio amplifiers.Specifications High Fidelity Audio Frequency Amplifier Output Low...

The  is a Insulated Gate Bipolar Transistor (IGBT) housed in a TO-247PLUS package. This component is designed for high-speed switching applications, offering low conduction and switching losses. Key Specifications: Collector-Emitter...

HY3215 MOSFET | High-Efficiency N-Channel Power Transistor   ( REFURB ) The HY3215 MOSFET  ( REFURB ) is a high-performance N-channel power transistor designed to provide fast switching, high efficiency, and reliable performance. It is...

This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance , provide superior...

HY1920 MOSFET - High-Performance N-Channel Power Transistor The HY1920 MOSFET is a robust, high-efficiency N-Channel MOSFET, ideal for power applications requiring high current and voltage capabilities. It features a 200V drain-to-source voltage...

Specifications Technical parameters of Transistor 40N10 MOS-N-FET 100 V, 40 A, 0.04 Ohm, 160 W, TO220 Transistor type: N-MOSFET Maximum voltage drain-source Uds: 100 [V] Maximum drain current: 40 [A]...

UNI-T UT603 — handheld inductance and capacitance (LC) meter that tests resistors, capacitors and inductors and also measures transistor parameters (hFE). Ideal for electronics repair, coil and transformer work, education,...

UNI-T UT601 — handheld capacitance and resistance meter from the UNI-T UT600 series, used to test resistors and capacitors and to measure transistor parameters (hFE). A practical component tester for...

📝 Product Description The NCEP15T14 MOSFET is a powerful, high-performance N-channel enhancement-mode transistor designed for both low and high-power switching applications. With a maximum voltage rating of 150V, this compact...

This is IRF540N MOSFET N Channel Transistor  Hexfet Power Mosfet type. This is a general purpose and Specifications: Drain-Source Volt (Vds): 100V Drain-Gate Volt (Vdg): 100V Gate-Source Volt (Vgs): 20V Drain...

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three groups Q, R and S according to their DC current gain. On special...