340 Search Results for: “Transistor”

2N3055 is a general purpose NPN power transistor manufactured with the epitaxial base process, mounted in a hermetically sealed metal case. The device is designed for general purpose switching and amplifier applications.  2N3055...

Type Designator: TIP102The material of Transistor is Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 80 W Maximum Collector-Base Voltage |Vcb|: 100 V Maximum Collector-Emitter Voltage |Vce|: 100 V Maximum...

Characteristics of 2SC2625 Transistor Type - NPN Collector-Emitter Voltage: 400 V Collector-Base Voltage: 450 V Emitter-Base Voltage: 7 V Collector Current: 10 A Collector Dissipation - 80 W DC Current Gain (hfe) - 10 Operating and Storage Junction Temperature Range -55 to +150 °C...

2SC1383 NPN TRANSISTORCharacteristics 2SC1383 bipolar transistor Type -n-p-n Collector-Emitter Voltage:25V Collector-Base Voltage:30V Emitter-Base Voltage:5?V Collector Current:1A Collector Dissipation -1W DC Current Gain (hfe) -85to?340 Transition Frequency -200MHz Operating and Storage...

Features and Technical Specifications Type: p-n-p Power Dissipation: 0.4watts High voltage and High current: Vceo = 50v and Ic = 150mA Low Noise: 1dB Case Material: molded plastic Collector power...

TIP122 TIP 122 NPN Darlington transistorTIP122 NPN Darlington transistorMax Voltage Collector Emmiter=100VMax Collector current =5A (8A SURGE)Collector power dissipation =1250 mW

TIP41C - PNP Power Transistors  is designed for general–purpose switching and amplifier applications. Collector–Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector–Emitter Sustaining Voltage —...

TIP42 TIP142C PNP Power Transistor is designed for general–purpose switching and amplifier applications. Collector–Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector–Emitter Sustaining Voltage —...

The type was registered by Motorola Semiconductor in the mid-sixties, together with the complementary PNP type 2N3906, and represented a significant performance/cost improvement, with the plastic TO-92 case replacing metal...

2N3055 is a general purpose NPN power transistor manufactured with the epitaxial base process, mounted in a hermetically sealed metal case. The device is designed for general purpose switching and amplifier applications.  2N3055...

2N2222A Bipolar Junction NPN Transistor is commonly used in general-purpose low-power amplifying/switching applications. Bipolar Junction NPN Transistor is designed for low to medium current, low power, medium voltage, and can...

BC558 is a PNP transistor hence the collector and emitter will be closed (Forward biased) when the base pin is held at ground and will be opened (Reverse biased) when a signal is...

s855 Transistor in Pakistan

Bipolar NPN Transistor is an age-old Japanese Bipolar audio frequency NPN transistor. 2SC945 50V NPN transistor has a decent gain value (hfe) of maximum 700 and is highly linear. Hence this...

This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance , provide superior...

TIP142 NPN DARLINGTON TRANSISTOR IN PAKISTANMax Voltage Collector Emmiter=100V Max Collector current =10A

The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. It is designed for low electric current and power and medium...

This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and use s an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability....

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three groups Q, R and S according to their DC current gain. On special...

2SC5200 NPN Power Transistor  is Designed for general purpose power amplifier and switching applications. This is suitable transistor for high power audio amplifiers.Specifications High Fidelity Audio Frequency Amplifier Output Low...

The MJ13009 Transistor is a high-performance, NPN power transistor widely used in power switching applications, inverters, and amplifiers. Designed for reliability, the MJ13009 transistor ensures efficient performance in high-current and...

G75H120DF1 IGBT - 75A 1200V High-Efficiency Power Transistor The G75H120DF1 is a high-performance 75A, 1200V (IGBT) designed for efficient power conversion and high-speed switching applications. It is widely used in motor drives,...

IGBT G40T120BK3SD – High-Performance Power Transistor The IGBT G40T120BK3SD is a high-power Insulated Gate Transistor (IGBT). First, it supports 1200V and 40A applications, making it perfect for demanding tasks. Next,...

General purpose Silicon NPN transistorUsed for switching and amplification purposes is available in Pakistan.  The NPN transistor is geared towards passing electrons from the emitter to the collector (so that...