1000 Search Results for: “Transistor”

2N3055 is a general purpose NPN power transistor manufactured with the epitaxial base process, mounted in a hermetically sealed metal case. The device is designed for general purpose switching and amplifier applications.  2N3055...

General purpose Silicon NPN transistor Used for switching and amplification purpose.

The power transistor is a three-terminal semiconductor device used to amplify and switch electronic signals and electrical power. It is a junction transistor designed to handle high current and power;...

G60N100 IGBT: A Powerful and Versatile Solution The G60N100 IGBT (Insulated Gate Bipolar Transistor) is a high-performance power semiconductor designed to meet the demands of modern power electronics applications. With...

CTC 313 TRANSISTOR IS NOW AVAIBLE IN PAKSITAN

The type was registered by Motorola Semiconductor in the mid-sixties, together with the complementary PNP type 2N3906, and represented a significant performance/cost improvement, with the plastic TO-92 case replacing metal...

2SC1383 NPN TRANSISTORCharacteristics 2SC1383 bipolar transistor Type -n-p-n Collector-Emitter Voltage:25V Collector-Base Voltage:30V Emitter-Base Voltage:5?V Collector Current:1A Collector Dissipation -1W DC Current Gain (hfe) -85to?340 Transition Frequency -200MHz Operating and Storage...

TIP122 TIP 122 NPN Darlington transistorTIP122 NPN Darlington transistorMax Voltage Collector Emmiter=100VMax Collector current =5A (8A SURGE)Collector power dissipation =1250 mW

The S9012 is a common PNP bipolar junction transistor used for general-purpose switching and amplification in electronic circuits. This component is suitable for various hobbyist and professional electronics projects requiring...

HY3215 TO‑247 MOSFET Transistor delivers 150 V and 130 A continuous current with ultra-low RDS(on) of ~0.014 Ω. This makes the HY3215 ideal for industrial inverters, welding machines, motor drivers, and high-efficiency DC-DC...

This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and use s an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability....

G75H120DF1 IGBT - 75A 1200V High-Efficiency Power Transistor The G75H120DF1 is a high-performance 75A, 1200V (IGBT) designed for efficient power conversion and high-speed switching applications. It is widely used in motor drives,...

Max Voltage Collector Emmiter=50 VMax Collector current=150 mA Collector power dissipation =400 mW

Characteristics of 2SC2625 Transistor Type - NPN Collector-Emitter Voltage: 400 V Collector-Base Voltage: 450 V Emitter-Base Voltage: 7 V Collector Current: 10 A Collector Dissipation - 80 W DC Current Gain (hfe) - 10 Operating and Storage Junction Temperature Range -55 to +150 °C...

The BUT11AF was designed for use in line operated switching power supplies in awide range of end use applications. This device combines the latest state of the art bipolar fabrication...

A tip142 transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Bipolar NPN Transistor  is composed of semiconductor material usually with at least three...

The MJ13009 Transistor is a high-performance, NPN power transistor widely used in power switching applications, inverters, and amplifiers. Designed for reliability, the MJ13009 transistor ensures efficient performance in high-current and...

S9018 Transistor J8 NPN 18V 50mA 200mW TO-92 The S9018 is a general-purpose NPN bipolar junction transistor designed for low-power amplification and switching circuits. With a maximum collector current of...

Features Collector-Emitter Volt (Vceo): 50V Collector-Base Volt (Vcbo): 50V Collector Current (Ic): 0.15A hfe: 60-600 @ 1mA Power Dissipation (Ptot): 625mW Current-Gain-Bandwidth (ftotal): 60MHz Type: PNP

Infineon G50T60 IGBT Transistor – 600V 50A | TO-247 High Power Switching Module for UPS, Inverter & Welding  📄 Product Description: Boost your power electronics with the Infineon G50T60 IGBT...

S9018 NPN Transistor J8 TO-92 — Low-Power General Purpose Amplifier & SwitchThe S9018 is a widely used NPN bipolar junction transistor (BJT) in a compact TO-92 through-hole package. It is...

The K75EEH5 IGBT is a 600V Insulated Gate Bipolar Transistor (IGBT) engineered to deliver high switching efficiency and robust performance for various industrial applications. With a current rating of 75A,...

Bipolar NPN Transistor is an age-old Japanese Bipolar audio frequency NPN transistor. 2SC945 50V NPN transistor has a decent gain value (hfe) of maximum 700 and is highly linear. Hence this...