1000 Search Results for: “transistor”

TIP122 TIP 122 NPN Darlington transistorTIP122 NPN Darlington transistorMax Voltage Collector Emmiter=100VMax Collector current =5A (8A SURGE)Collector power dissipation =1250 mW

The 6N136 is a 1-channel 8-pin high speed Transistor Optocoupler consists of an AlGaAs LED optically coupled to a high speed photodetector transistor for each channel. A separate connection for...

This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and use s an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability....

The MJ13009 Transistor is a high-performance, NPN power transistor widely used in power switching applications, inverters, and amplifiers. Designed for reliability, the MJ13009 transistor ensures efficient performance in high-current and...

HY3215 TO‑247 MOSFET Transistor delivers 150 V and 130 A continuous current with ultra-low RDS(on) of ~0.014 Ω. This makes the HY3215 ideal for industrial inverters, welding machines, motor drivers, and high-efficiency DC-DC...

Bipolar NPN Transistor is an age-old Japanese Bipolar audio frequency NPN transistor. 2SC945 50V NPN transistor has a decent gain value (hfe) of maximum 700 and is highly linear. Hence this...

The S9014 is an NPN epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuits. Features: High total power dissipation. (PT=450mW)High hFE and good linearityComplementary...

G60N60 IGBT - High-Performance Transistor for Industrial Power Systems The G60N60 IGBT is a high-efficiency insulated-gate bipolar transistor designed for demanding power applications. With a voltage rating 600V and a current capacity...

Applications:1. Inductive cooking2. Inverterized microwave ovens3. Resonant converters4. Soft swtiching applicationsFeatures : Powerful monolithic body diode with low forward voltage designed for soft commutation onlyLow EMIQualified according to JESD-022 for target applicationsPb-free...

2SC5200 NPN Power Transistor  is Designed for general purpose power amplifier and switching applications. This is suitable transistor for high power audio amplifiers.Specifications High Fidelity Audio Frequency Amplifier Output Low...

Specifications Technical parameters of Transistor 40N10 MOS-N-FET 100 V, 40 A, 0.04 Ohm, 160 W, TO220 Transistor type: N-MOSFET Maximum voltage drain-source Uds: 100 [V] Maximum drain current: 40 [A]...

Infineon G50T60 IGBT Transistor – 600V 50A | TO-247 High Power Switching Module for UPS, Inverter & Welding  📄 Product Description: Boost your power electronics with the Infineon G50T60 IGBT...

This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance , provide superior...

📝 Product Description The IRLZ34N is a logic-level N-Channel MOSFET designed for high-efficiency switching and amplification in low-voltage circuits. With a drain current of 30A, low RDS(on) of 35mΩ, and...

HY3215 MOSFET | High-Efficiency N-Channel Power Transistor   ( REFURB ) The HY3215 MOSFET  ( REFURB ) is a high-performance N-channel power transistor designed to provide fast switching, high efficiency, and reliable performance. It is...

K40T120 IGBT: A Powerful and Versatile Solution The K40T120 IGBT (Insulated Gate Bipolar Transistor) is a high-performance power semiconductor designed to meet the demands of modern power electronics applications. With...

Versatile Tester: FNIRSI LCR-P1 measures transistors, capacitors, resistors, inductors, diodes, MOSFETs, and batteries. User-Friendly Design: Features a replaceable patch seat, 1.44-inch color screen, 300mAh battery, and Type-C charging/data port. Anti-Burn...

The K75EEH5 IGBT is a 600V Insulated Gate Bipolar Transistor (IGBT) engineered to deliver high switching efficiency and robust performance for various industrial applications. With a current rating of 75A,...

This is IRF540N MOSFET N Channel Transistor  Hexfet Power Mosfet type. This is a general purpose and Specifications: Drain-Source Volt (Vds): 100V Drain-Gate Volt (Vdg): 100V Gate-Source Volt (Vgs): 20V Drain...

The  is a Insulated Gate Bipolar Transistor (IGBT) housed in a TO-247PLUS package. This component is designed for high-speed switching applications, offering low conduction and switching losses. Key Specifications: Collector-Emitter...

Product Name: CRMicro G40T120 IGBT TransistorBrand: CRMicro Description:The G40T120 is a high-performance IGBT (Insulated Gate Bipolar Transistor) from CRMicro, designed for fast switching and high-efficiency power applications. With a collector-emitter...

HY1920 MOSFET - High-Performance N-Channel Power Transistor The HY1920 MOSFET is a robust, high-efficiency N-Channel MOSFET, ideal for power applications requiring high current and voltage capabilities. It features a 200V drain-to-source voltage...

UNI-T UT603 — handheld inductance and capacitance (LC) meter that tests resistors, capacitors and inductors and also measures transistor parameters (hFE). Ideal for electronics repair, coil and transformer work, education,...