657 Search Results for: “transistor”

General purpose Silicon NPN transistor Used for switching and amplification purpose.

The power transistor is a three-terminal semiconductor device used to amplify and switch electronic signals and electrical power. It is a junction transistor designed to handle high current and power;...

CTC 313 TRANSISTOR IS NOW AVAIBLE IN PAKSITAN

The BUT11AF was designed for use in line operated switching power supplies in awide range of end use applications. This device combines the latest state of the art bipolar fabrication...

IC NPN Transistor D1071 2SD107

NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed high-voltage switching, and is ideal for use as a driver in devices...

The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. It is designed for low electric current and power and medium...

The BC557 PNP Transistor is a versatile, general-purpose transistor widely used in switching and amplification applications by wide range of users mostly students. With its low noise and high performance,...

These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits.The NPN types are the BD135 and...

The TIP127 is a PNP type Darlington pair transistor. It is manufactured for universal drive amplifications and less velocity swapping submissions. It is existing in TO-220 kind of cascading. Its...

Features Collector-Emitter Volt (Vceo): 50V Collector-Base Volt (Vcbo): 50V Collector Current (Ic): 0.15A hfe: 60-600 @ 1mA Power Dissipation (Ptot): 625mW Current-Gain-Bandwidth (ftotal): 60MHz Type: PNP

The MJ13009 Transistor is a high-performance, NPN power transistor widely used in power switching applications, inverters, and amplifiers. Designed for reliability, the MJ13009 transistor ensures efficient performance in high-current and...

IGBT G40T120BK3SD – High-Performance Power Transistor The IGBT G40T120BK3SD is a high-power Insulated Gate Transistor (IGBT). First, it supports 1200V and 40A applications, making it perfect for demanding tasks. Next,...

Max Voltage Collector Emmiter=100VMax Collector current=5A

TIP142 NPN DARLINGTON TRANSISTOR IN PAKISTANMax Voltage Collector Emmiter=100V Max Collector current =10A

ULN2803A smd is High-Voltage, High Current Darlington Transistor Arrays is  8 NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital...

Max Voltage Collector Emmiter=50 VMax Collector current=150 mA Collector power dissipation =400 mW

This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance , provide superior...

Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A Power -...

60N60FD1 MOSFET - 600V 60A N-Channel Power Transistor The 60N60FD1 is a high-performance 600V 60A N-Channel MOSFET, optimized for power conversion, switching applications, and industrial automation. With low RDS(on) and high-speed switching...

📝 Product Description The NCEP15T14 MOSFET is a powerful, high-performance N-channel enhancement-mode transistor designed for both low and high-power switching applications. With a maximum voltage rating of 150V, this compact...

Characteristics of 2SA683 Transistor Type: PNP Collector-Emitter Voltage, max: -25 V Collector-Base Voltage, max: -30 V Emitter-Base Voltage, max: -5 V Collector Current − Continuous, max: -1 A Collector Dissipation: 1 W DC Current Gain (hfe): 85 to 340 Transition Frequency, min: 200 MHz Operating and...