DESCRIPTIONThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for...

The Nell IRF260 is a three-terminal silicon devicewith current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4...

VDSS =100VRDS(on) = 0.023 ID = 57A

The IRF520 transistor load control driver module is used to connect up to 120W DC loads to an Arduino controller or other microprocessor control device. The module can perform switching function...

Transistor Type: MOSFETTransistor Polarity: N Channel Drain Source Voltage, Vds: 200V Continuous Drain Current, Id: 18A On-Resistance, Rds(on): 150mohm Rds(on) Test Voltage, Vgs: 10V Drain Source On Resistance @ 10V: 150mohm...

FEATURES• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs...

SpecificationValue Family IRF740 Channel Mode Enhancement Channel Type N Maximum Continuous Drain Current 10A Maximum Drain Source Resistance 0.55Ohm@10V Maximum Drain Source Voltage 400V Category Power MOSFET Maximum Gate Source...

DESCRIPTIONThird generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred...

The IRF840 is an N-Channel Power MOSFET which can switch loads up to 500V. The Mosfet could switch loads that consume up to 8A, it can turn on by providing...

DESCRIPTIONThird generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred...

FEATURESDynamic dV/dt Rating Repetitive Avalanche Rated P-Channel 175 C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC

75V Single N-Channel HEXFET Power MOSFET is provided in a TO-220AB packageN CHANNEL POWER MOSFET Technical Specifications of IRFB3307 MOSFET: Casing: TO-220 VDSS 75V RDS(on) typ. 5.0m max. 6.3m ID...

Technical Specifications: Casing: TO-220 Voltage(max): 100V I(max): 180A Execution: N-Channel Type: IRFB 4110

IRFB 4115 Power MOSFET N channel

IRFP450 N CHANNEL POWER MOSFETVds max=500 V Rds< 0.4 Id =14 A

VDSS = 200V RDS(on) = 0.075 ID = 30A

IRFP260N CHANNEL POWER MOSFETVds max=200 V Rds< 0.4 Id =50 A

IRFZ44N POWER MOSFET Features: Type:Field-Effect Transistor Brand Name: International Rectifier Package Type: Throught Hole Model Number: IRFZ44NPBF TO-220AB: MOSFET N-Channel, Metal Oxide 55V 49A: FETs - Single Mosfet Type :...

IRFZ44N POWER MOSFET Features: Type:Field-Effect Transistor Brand Name: International Rectifier Package Type: Throught Hole Model Number: IRFZ44NPBF TO-220AB: MOSFET N-Channel, Metal Oxide 55V 49A: FETs - Single Mosfet Type :...

The ISD1820 Recording Module Voice Board is the real easy way to add Voice Recording (and Playback) to your project. The Module can be operated directly by using the 3...