60 Search Results for: “saturation”

UNI-T UT336V — wireless digital vacuum gauge for verifying dehydration and cleanliness of refrigeration and heat-pump systems during installation, commissioning and maintenance. Bluetooth-connected to the free iENV app. Genuine UNI-T...

The heart rate sensor module MAX30100 is an integrated pulse oximetry and heart rate monitor sensor solution. Heartbeat sensor combines two LEDs, the photodetector, optimized optics. This best heart rate module...

GENERAL DESCRIPTION ■ PACKAGE OUTLINEThe NJM2606/06A are integrated circuits with wide operating supply voltage range for DC motor speed control. Especially, the NJM2606A is suited for the applications requiring low...

Features and Technical Specifications Type: p-n-p Power Dissipation: 0.4watts High voltage and High current: Vceo = 50v and Ic = 150mA Low Noise: 1dB Case Material: molded plastic Collector power...

G60N100 IGBT: A Powerful and Versatile Solution The G60N100 IGBT (Insulated Gate Bipolar Transistor) is a high-performance power semiconductor designed to meet the demands of modern power electronics applications. With...

The MAX30102 is an integrated pulse oximeter or SO2 sensoro, and heart rate monitor biosensor module. MAX30102 SO2 integrates a red LED and an infrared LED, photodetector, optical components, and low-noise...

Description Marked "MJE13003G" on the package with UTC's logo, this is Unisonic Technologies' (UTC) MJE13003G (a variant of the 13003 family), a high-voltage, high-speed NPN silicon power bipolar junction transistor...

TIP42 TIP142C PNP Power Transistor is designed for general–purpose switching and amplifier applications. Collector–Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector–Emitter Sustaining Voltage —...

S9018 Transistor J8 NPN 18V 50mA 200mW TO-92 The S9018 is a general-purpose NPN bipolar junction transistor designed for low-power amplification and switching circuits. With a maximum collector current of...

S9018 NPN Transistor J8 TO-92 — Low-Power General Purpose Amplifier & SwitchThe S9018 is a widely used NPN bipolar junction transistor (BJT) in a compact TO-92 through-hole package. It is...

Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A Power -...

TIP41C - PNP Power Transistors  is designed for general–purpose switching and amplifier applications. Collector–Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector–Emitter Sustaining Voltage —...

This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and use s an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability....

Welcome to HallRoadLahore.pk! We’re excited to introduce you to the dsPIC30F2010 Microcontroller, a powerful and versatile device that’s perfect for a wide range of applications. Let’s dive into the details and...

K40T120 IGBT: A Powerful and Versatile Solution The K40T120 IGBT (Insulated Gate Bipolar Transistor) is a high-performance power semiconductor designed to meet the demands of modern power electronics applications. With...

Product Voltage: 600V Current: 100A Module Type: IGBT The 2MBI100N-060, available for purchase across Pakistan including major cities like Lahore, Karachi, Peshawar, and Quetta through hallroadlahore.pk, is a high-performance Insulated...

The GWA80H65DFB, also known by the ST part number STGWA80H65DFB, is a Trench Field‑Stop IGBT engineered for high-speed switching applications. Featuring an integrated ultra-fast soft recovery diode, this device offers...

FGA50N100BNTD2 – 1000 V, 50 A NPT Trench IGBT with Built-in Fast Diode, TO‑3P Package Product Description: The FGA50N100BNTD2 is a high-performance 1000V, 50A N-channel Insulated Gate Bipolar Transistor (IGBT) designed for...

NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed high-voltage switching, and is ideal for use as a driver in devices...

UNI T Endoscope Borescope UT665 displays clear images through a flexible camera probe. This UT-665 industrial best borescope is useful for viewing details of automobiles engine, pipelines, inner building walls, drain...

75A 650V ON Semiconductor 75T65SQDT IGBT with Soft Fast Recovery Diode-hallroadlahore.pk 📄 Product Description: The 75T65SQDT is a 650V, 75A N-channel Field-Stop Trench IGBT from ON Semiconductor. It features an...

2N3055 is a general purpose NPN power transistor manufactured with the epitaxial base process, mounted in a hermetically sealed metal case. The device is designed for general purpose switching and amplifier applications.  2N3055...

The Copy GW80H65 80H65 IGBT, part of our HB series, combines high-speed switching with low saturation voltage, making it an excellent choice for frequency converters. Features Advanced Structure: Developed using...

BS170 N-Channel FET is enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. BS170 have been designed to minimize on-state resistance while provide rugged, reliable,...