738 Search Results for: “fast-switching”

HY3215 MOSFET | High-Efficiency N-Channel Power Transistor   ( REFURB ) The HY3215 MOSFET  ( REFURB ) is a high-performance N-channel power transistor designed to provide fast switching, high efficiency, and reliable performance. It is...

DESCRIPTIONThird generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred...

The IRF9540 is a P-channel power MOSFET designed for a wide range of applications. It features low on-resistance and fast switching speeds, making it suitable for use in various circuits...

These SPDT momentary travel limit switches are designed for precise control in industrial and electronic applications. Featuring a 1NO1NC configuration, these micro switches provide reliable switching action for automated systems...

The DSEK60-02A is a reliable power diode with FRED (Fast Recovery Epitaxial Diode) technology in a TO-247AD package. Specifications Repetitive Peak Reverse Voltage (VRRM): 200 V Average Forward Current (IFAV):...

9N90 MOSFET | High Voltage N-Channel Power Transistor for Efficient Switching Applications The 9N90 MOSFET is a high-performance N-channel power transistor designed to handle high voltages with efficiency. It is widely used...

KGF75N65 IGBT – 650V, 75A, TO-247 Package The KGF75N65 (also marked as 75N65KDF or KGF75N65KDF) is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for fast switching and high-efficiency power...

UF4007 Ultra Fast Recovery Rectifier DiodeThe UF4007 is a high-performance ultra-fast recovery rectifier diode designed for applications requiring fast switching speeds and low power loss. With a 1A current rating...

Description Marked "MJE13003G" on the package with UTC's logo, this is Unisonic Technologies' (UTC) MJE13003G (a variant of the 13003 family), a high-voltage, high-speed NPN silicon power bipolar junction transistor...

The Nell IRF260 is a three-terminal silicon devicewith current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4...

Q200V75SDB1 IGBT Module – 200A 750V The Q200V75SDB1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for efficient power switching applications. With a 200A Current rating and 750v voltage...

FEATURES• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs...

75A 650V ON Semiconductor 75T65SQDT IGBT with Soft Fast Recovery Diode-hallroadlahore.pk 📄 Product Description: The 75T65SQDT is a 650V, 75A N-channel Field-Stop Trench IGBT from ON Semiconductor. It features an...

G60N60 IGBT - High-Performance Transistor for Industrial Power Systems The G60N60 IGBT is a high-efficiency insulated-gate bipolar transistor designed for demanding power applications. With a voltage rating 600V and a current capacity...

Product Name: CRMicro G40T120 IGBT TransistorBrand: CRMicro Description:The G40T120 is a high-performance IGBT (Insulated Gate Bipolar Transistor) from CRMicro, designed for fast switching and high-efficiency power applications. With a collector-emitter...

DESCRIPTIONThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for...

Solid-state Relay 40A is an electronic switching device that switches conduction states when a small external voltage is Input voltage 3-32VDC. Applying for ON-OFF lamps, electric consumers 5-60VDC or DC...

IGBT G40T120BK3SD – High-Performance Power Transistor The IGBT G40T120BK3SD is a high-power Insulated Gate Transistor (IGBT). First, it supports 1200V and 40A applications, making it perfect for demanding tasks. Next,...

FEATURESDynamic dV/dt Rating Repetitive Avalanche Rated P-Channel 175 C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC

Description:The 800R4S0 Power MOSFET N-Channel is a reliable, high-speed switching transistor designed for efficient power conversion and control. Ideal for use in power supplies, inverters, motor drivers, and switching circuits,...

NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed high-voltage switching, and is ideal for use as a driver in devices...

1n4148, diode, switching diode, signal diode, small signal diode, high-speed diode, fast switching diode, general purpose diode, PN junction diode, semiconductor diode, electronic component, electronic device, circuit component, rectifier diode,...

SUNSHINE P1 PRO INTELLIGENT REGULATED POWER SUPPLY P1-PRO 1.It can be used in many fields such as burn-in, battery spot welding, battery start-up, QC fast charging, PD fast charging, waveform...

MOSFET NCE15T14: Elevate Your Electronic Designs The MOSFET NCE15T14 is a high-efficiency N-Channel enhancement mode power MOSFET, perfect for a wide range of electronic applications. With its low on-resistance and fast switching...