17 Search Results for: “VCE(sat)”

TIP42 TIP142C PNP Power Transistor is designed for general–purpose switching and amplifier applications. Collector–Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector–Emitter Sustaining Voltage —...

NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed high-voltage switching, and is ideal for use as a driver in devices...

TIP41C - PNP Power Transistors  is designed for general–purpose switching and amplifier applications. Collector–Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector–Emitter Sustaining Voltage —...

G75H120DF1 IGBT - 75A 1200V High-Efficiency Power Transistor The G75H120DF1 is a high-performance 75A, 1200V (IGBT) designed for efficient power conversion and high-speed switching applications. It is widely used in motor drives,...

K75T60 IGBT - 600V 75A High-Power IGBT The K75T60 is a high-efficiency 600V 75A IGBT, designed for power switching, motor control, and industrial automation. With a low saturation voltage (Vce(sat)) and high-speed...

K40T120 IGBT: A Powerful and Versatile Solution The K40T120 IGBT (Insulated Gate Bipolar Transistor) is a high-performance power semiconductor designed to meet the demands of modern power electronics applications. With...

2N2222A Bipolar Junction NPN Transistor is commonly used in general-purpose low-power amplifying/switching applications. Bipolar Junction NPN Transistor is designed for low to medium current, low power, medium voltage, and can...

Product Voltage: 600V Current: 100A Module Type: IGBT The 2MBI100N-060, available for purchase across Pakistan including major cities like Lahore, Karachi, Peshawar, and Quetta through hallroadlahore.pk, is a high-performance Insulated...

G60N100 IGBT: A Powerful and Versatile Solution The G60N100 IGBT (Insulated Gate Bipolar Transistor) is a high-performance power semiconductor designed to meet the demands of modern power electronics applications. With...

The TIP127 is a PNP type Darlington pair transistor. It is manufactured for universal drive amplifications and less velocity swapping submissions. It is existing in TO-220 kind of cascading. Its...

IGBT AK120DCT - High-Efficiency Power Transistor The IGBT AK120DCT HE-737 is a high-performance 120A, 600V designed for efficient power conversion and high-speed switching applications. It is ideal for industrial motor drives,...

KGF75N65 IGBT – 650V, 75A, TO-247 Package The KGF75N65 (also marked as 75N65KDF or KGF75N65KDF) is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for fast switching and high-efficiency power...

NCE 75TD120: A Powerful and Versatile Solution The NCE 75TD120 IGBT (Insulated Gate Bipolar Transistor) is a high-performance power semiconductor designed to meet the demands of modern power electronics applications....

HH75N120 IGBT: A Powerful and Versatile Solution The HH75N120 IGBT (Insulated Gate Bipolar Transistor) is a high-performance power semiconductor designed to meet the demands of modern power electronics applications. With...

YGW75N65FP IGBT Power Transistor – 75A 650V TO-247 Module First, use the YGW75N65FP IGBT Power Transistor module for fast switching and high-voltage tasks. Next, rely on its 650V collector-emitter voltage...

AIKQ200N75CP2 (AKQ20FCP) – 750 V, 200 A EDT2 Trench IGBT & Emitter‑Controlled Diode, PG-TO247PLUS Package 🛠️ Product Description: The AIKQ200N75CP2, marked as AKQ20FCP, is a high-power 750 V, 200 A trench-gate IGBT featuring Infineon’s...

FeaturesVCES = 1200V VCE(on) typ. = 2.78V @VGE = 15V, IC = 24A UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching,...