143 Search Results for: “IGBT RN75H65”

High-Power Switching Solution for Industrial Applications The 75A 1200V IGBT Module always delivers fast, efficient, and reliable power switching. First, it handles high-speed switching with ease. Then, it reduces conduction...

The Copy GW80H65 80H65 IGBT, part of our HB series, combines high-speed switching with low saturation voltage, making it an excellent choice for frequency converters. Features Advanced Structure: Developed using...

The K75EEH5 IGBT is a 600V Insulated Gate Bipolar Transistor (IGBT) engineered to deliver high switching efficiency and robust performance for various industrial applications. With a current rating of 75A,...

G75H120DF1 IGBT - 75A 1200V High-Efficiency Power Transistor The G75H120DF1 is a high-performance 75A, 1200V (IGBT) designed for efficient power conversion and high-speed switching applications. It is widely used in motor drives,...

The  is a Insulated Gate Bipolar Transistor (IGBT) housed in a TO-247PLUS package. This component is designed for high-speed switching applications, offering low conduction and switching losses. Key Specifications: Collector-Emitter...

Q200V75SDB1 IGBT Module – 200A 750V The Q200V75SDB1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for efficient power switching applications. With a 200A Current rating and 750v voltage...

DESCRIPTIONThe UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.

K75T60 IGBT - 600V 75A High-Power IGBT The K75T60 is a high-efficiency 600V 75A IGBT, designed for power switching, motor control, and industrial automation. With a low saturation voltage (Vce(sat)) and high-speed...

SGTQ160V65SDB1APW + Q160V65SDB1A is a high-performance IGBT solution featuring 650V voltage rating and 160A current handling. Designed for high-efficiency motor drives, inverter systems, and automotive applications, it combines advanced TrenchFS...

Pin configuration isolated MOSFET driver TL250The pin layout of TLP250 is given below. It is clearly shown in the figure that led at the input stage and photodetector diode at...

IRFP260N CHANNEL POWER MOSFETVds max=200 V Rds< 0.4 Id =50 A

3BR0665J targets for the Off-Line battery adapters and low cost SMPS for lower power range such as application for DVD R/W, DVD Combi, Blue ray DVD player, set top box,...

75V Single N-Channel HEXFET Power MOSFET is provided in a TO-220AB packageN CHANNEL POWER MOSFET Technical Specifications of IRFB3307 MOSFET: Casing: TO-220 VDSS 75V RDS(on) typ. 5.0m max. 6.3m ID...

This imported 8 IGBT inverter PCB features integrated SMD components, designed for use in power electronics and inverter-based systems. The board utilizes an 8-IGBT configuration to manage high-frequency switching and...

IRFB 4115 Power MOSFET N channel

Description:The 800R4S0 Power MOSFET N-Channel is a reliable, high-speed switching transistor designed for efficient power conversion and control. Ideal for use in power supplies, inverters, motor drivers, and switching circuits,...

MOSFET NCE15T14: Elevate Your Electronic Designs The MOSFET NCE15T14 is a high-efficiency N-Channel enhancement mode power MOSFET, perfect for a wide range of electronic applications. With its low on-resistance and fast switching...

SpecificationValue Family IRF740 Channel Mode Enhancement Channel Type N Maximum Continuous Drain Current 10A Maximum Drain Source Resistance 0.55Ohm@10V Maximum Drain Source Voltage 400V Category Power MOSFET Maximum Gate Source...

Technical Specifications: Casing: TO-220 Voltage(max): 100V I(max): 180A Execution: N-Channel Type: IRFB 4110