1000 Search Results for: “BJT”

Description Marked "MJE13003G" on the package with UTC's logo, this is Unisonic Technologies' (UTC) MJE13003G (a variant of the 13003 family), a high-voltage, high-speed NPN silicon power bipolar junction transistor...

Type of transistor PNP Polarisation bipolar Collector-emitter voltage 160V Collector current 12A Power 0.1kW Mounting THT Frequency 15MHz

The J13009 is a high-voltage, high-speed power switching transistor commonly used in power supply circuits and electronic ballasts. This component is designed for use in switching applications that require robust...

TIP42 TIP142C PNP Power Transistor is designed for general–purpose switching and amplifier applications. Collector–Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector–Emitter Sustaining Voltage —...

The TIP127 is a PNP type Darlington pair transistor. It is manufactured for universal drive amplifications and less velocity swapping submissions. It is existing in TO-220 kind of cascading. Its...

Type Designator: TIP102The material of Transistor is Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 80 W Maximum Collector-Base Voltage |Vcb|: 100 V Maximum Collector-Emitter Voltage |Vce|: 100 V Maximum...

NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed high-voltage switching, and is ideal for use as a driver in devices...

Features Collector-Emitter Volt (Vceo): 50V Collector-Base Volt (Vcbo): 50V Collector Current (Ic): 0.15A hfe: 60-600 @ 1mA Power Dissipation (Ptot): 625mW Current-Gain-Bandwidth (ftotal): 60MHz Type: PNP

DESCRIPTION·With TO-220 package ·Complement to type 2SA473 ·Collector current :IC=3A ·Collector dissipation:PC=10W@TC=25? APPLICATIONS ·Low frequency power amplifier ·Power regulator PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3...

Bipolar NPN Transistor is an age-old Japanese Bipolar audio frequency NPN transistor. 2SC945 50V NPN transistor has a decent gain value (hfe) of maximum 700 and is highly linear. Hence this...

TIP142 NPN DARLINGTON TRANSISTOR IN PAKISTANMax Voltage Collector Emmiter=100V Max Collector current =10A

TIP41C - PNP Power Transistors  is designed for general–purpose switching and amplifier applications. Collector–Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector–Emitter Sustaining Voltage —...

Characteristics of 2SC2625 Transistor Type - NPN Collector-Emitter Voltage: 400 V Collector-Base Voltage: 450 V Emitter-Base Voltage: 7 V Collector Current: 10 A Collector Dissipation - 80 W DC Current Gain (hfe) - 10 Operating and Storage Junction Temperature Range -55 to +150 °C...

S9018 Transistor J8 NPN 18V 50mA 200mW TO-92 The S9018 is a general-purpose NPN bipolar junction transistor designed for low-power amplification and switching circuits. With a maximum collector current of...

2N3055 is a general purpose NPN power transistor manufactured with the epitaxial base process, mounted in a hermetically sealed metal case. The device is designed for general purpose switching and amplifier applications.  2N3055...

The MJ13009 Transistor is a high-performance, NPN power transistor widely used in power switching applications, inverters, and amplifiers. Designed for reliability, the MJ13009 transistor ensures efficient performance in high-current and...

SS8050 NPN Transistor (SOT-23 / Y1) — Pakistani students, engineers, aur hobbyists ke liye ek reliable, low-cost SMD switching transistor jo signal amplification aur switching circuits mein use hota hai....

Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A Power -...

Max Voltage Collector Emmiter=50 VMax Collector current=150 mA Collector power dissipation =400 mW

These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits.The NPN types are the BD135 and...

Characteristics of 2SA683 Transistor Type: PNP Collector-Emitter Voltage, max: -25 V Collector-Base Voltage, max: -30 V Emitter-Base Voltage, max: -5 V Collector Current − Continuous, max: -1 A Collector Dissipation: 1 W DC Current Gain (hfe): 85 to 340 Transition Frequency, min: 200 MHz Operating and...

The S9012 is a common PNP bipolar junction transistor used for general-purpose switching and amplification in electronic circuits. This component is suitable for various hobbyist and professional electronics projects requiring...

Max Voltage Collector Emmiter=100VMax Collector current=5A

2SC1383 NPN TRANSISTORCharacteristics 2SC1383 bipolar transistor Type -n-p-n Collector-Emitter Voltage:25V Collector-Base Voltage:30V Emitter-Base Voltage:5?V Collector Current:1A Collector Dissipation -1W DC Current Gain (hfe) -85to?340 Transition Frequency -200MHz Operating and Storage...