206 Search Results for: “high-pressure”

Max Voltage Collector Emmiter=50 VMax Collector current=150 mA Collector power dissipation =400 mW

Dimensions:5mm Transparrent Round LED Size (Diameter) : 3mm Colour:GREEN Light Colour (ElectroStatic-Discharge) ESD=3000V (Operation Temperature Range) Topr= -25C ~ 80C (Storage Temperature Rage) Tstg= -40C ~ 100C (Soldering Temperature) Tsol=...

Technical parameters: Supply voltage: DC 7V-15V Quiescent current; 20mA SNR: 86% Output power: 10w + 10w (8 load) Efficiency: 90%. Shutdown Current: 4uA Input impedance: 15K Output Impedance: 4-8 Total...

Transistor Type: MOSFETTransistor Polarity: N Channel Drain Source Voltage, Vds: 200V Continuous Drain Current, Id: 18A On-Resistance, Rds(on): 150mohm Rds(on) Test Voltage, Vgs: 10V Drain Source On Resistance @ 10V: 150mohm...

0.1 Ohm 2W Resistor The 0.1 ohm 2W resistor is a low-value, high-power resistor designed for applications that require precise current control and efficient heat dissipation.  Key Features Resistance value...

The 2A683J Mylar film capacitor is a polyester film component rated for 100V with a capacitance of 0.068uF (68nF). Polyester film capacitors are commonly used in electronic circuits for their...

This 4 Axis CNC USB Controller is designed to be used for notebook and tablets simple configuration and compatibility. The card can run what all other MACH 3 controllers can run and...

The Nell IRF260 is a three-terminal silicon devicewith current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4...

KGF75N65 IGBT – 650V, 75A, TO-247 Package The KGF75N65 (also marked as 75N65KDF or KGF75N65KDF) is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for fast switching and high-efficiency power...

FEATURES• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs...

25Q32 SPI EPROM EEPROM MEMORY FLASH CHIP The W25Q32FV (32M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility...

Specifications Technical parameters of Transistor 40N10 MOS-N-FET 100 V, 40 A, 0.04 Ohm, 160 W, TO220 Transistor type: N-MOSFET Maximum voltage drain-source Uds: 100 [V] Maximum drain current: 40 [A]...

0.1 Ohm 5W Resistor The 0.1 ohm 5W resistor is a low-value, high-power resistor designed for applications that require precise current control and efficient heat dissipation.  Key Features Resistance value...

IRF3205 N CHANNEL POWER MOSFETVDSS = 55VRDS(on) = 8.0mID = 110A

Features■ High current TRIAC ■ Low thermal resistance with clip bonding ■ High commutation capability ■ BTA series UL1557 certified (File ref: 81734) ■ Packages are RoHS (2002/95/EC) compliant Applications ■ On/off function in static relays,...

The Copy GW80H65 80H65 IGBT, part of our HB series, combines high-speed switching with low saturation voltage, making it an excellent choice for frequency converters. Features Advanced Structure: Developed using...

HH75N120HA IGBT 75A 1200V for Solar Inverters 📄 Product Description: The HH75N120HA is a high-performance Insulated Gate Bipolar Transistor (IGBT) rated at 1200 volts and 75 amps, built with trench-gate...

Q200V75SDB1 IGBT Module – 200A 750V The Q200V75SDB1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for efficient power switching applications. With a 200A Current rating and 750v voltage...

FEATURESDynamic dV/dt Rating Repetitive Avalanche Rated P-Channel 175 C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC

The GWA80H65DFB, also known by the ST part number STGWA80H65DFB, is a Trench Field‑Stop IGBT engineered for high-speed switching applications. Featuring an integrated ultra-fast soft recovery diode, this device offers...