77 Search Results for: “collector-emitter”

SS8550 Y2 PNP SMD Transistor SOT-23 — Pakistani students, engineers, aur hobbyists ke liye ek reliable, low-cost switching transistor jo tight spaces mein bhi fit ho jata hai! Specifications Field...

Max Voltage Collector Emmiter=50 VMax Collector current=150 mA Collector power dissipation =400 mW

IGBT G40T120BK3SD – High-Performance Power Transistor The IGBT G40T120BK3SD is a high-power Insulated Gate Transistor (IGBT). First, it supports 1200V and 40A applications, making it perfect for demanding tasks. Next,...

IR Infrared LED Transmitter And Receiver Pair is the combo of both IR LED & photodiode. IR Transmitter And Receiver, which together can work as an IR sensor module. This is the IR...

The BUT11AF was designed for use in line operated switching power supplies in awide range of end use applications. This device combines the latest state of the art bipolar fabrication...

Specifications Technical parameters of Transistor 40N10 MOS-N-FET 100 V, 40 A, 0.04 Ohm, 160 W, TO220 Transistor type: N-MOSFET Maximum voltage drain-source Uds: 100 [V] Maximum drain current: 40 [A]...

The op amp/comparator is fully compatible with the tachometer and has a floating transistor as its output. This feature allows either a ground or supply referred load of up to...

BD139 NPN Transistor Features Plastic casing NPN Transistor Continuous Collector current (IC) is 1.5A Collector-Emitter voltage (VCE) is 80 V Collector-Base voltage (VCB) is 80V Emitter Base Breakdown Voltage (VBE)...

Characteristics of the 2SC5198 bipolar transistor Type - NPN Collector-Emitter Voltage: 140 V Collector-Base Voltage: 140 V Emitter-Base Voltage: 5 V Collector Current: 10 A Collector Dissipation - 100 W DC Current Gain (hfe) - 55 to 160 Transition Frequency - 30 MHz Operating and Storage...

BC547 NPN TO-92 Transistor Price in Pakistan Category: Discrete Semiconductor Products Family: Transistors (BJT) – Single Transistor Type: NPN Current – Collector (Ic) (Max): 100mA Voltage – Collector Emitter Breakdown...

BD140 is a medium power bipolar junction transistor that is mainly used for switching and amplification purpose. It belongs to the PNP transistor category and comes in the TO-126 package. It is made up of...

The BYD160T75SD/BGM160T75SD is a 750V, 160A Insulated Gate Bipolar Transistor (IGBT) developed by BYD Semiconductor. It features advanced Trench Field Stop (TrenchFS) technology and a soft, fast-recovery anti-parallel diode, making...

AIKQ200N75CP2 (AKQ20FCP) – 750 V, 200 A EDT2 Trench IGBT & Emitter‑Controlled Diode, PG-TO247PLUS Package 🛠️ Product Description: The AIKQ200N75CP2, marked as AKQ20FCP, is a high-power 750 V, 200 A trench-gate IGBT featuring Infineon’s...

FF100R12RT4 IGBT-Module  IGBT Module – High-Performance Power Switching Solution The FF100R12RT4  is a high-efficiency IGBT module designed for industrial and power electronics applications. With a collector-emitter voltage of 1200V and a...

PC817 Series contains an IRED optically coplied to a phototransistor.PC817 have package in a 4pin DIP,available in wide-lead spacing option and SMT gullwing lead-form option.input-output isolationvoltage(rms)is 5.0kV.collector-emmiter voltage is 80V(*) and CTR is...

NCE80TD65 IGBT - High-Efficiency Power Transistor for Industrial Applications The NCE80TD65 is a high-performance insulated-gate bipolar transistor (IGBT) ideal for industrial applications. With fast switching speeds, low on-state voltage drops, and high...

The FGH40N120AN is a 1200V, 40A Non-Punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT) developed by ON Semiconductor. This component is designed for high-speed switching applications, offering low conduction and...

YGD75N65U1 IGBT Transistor 75A 650V – High Efficiency TO-247 Power Module First, choose the YGD75N65U1 IGBT Power Transistor for fast switching and top energy efficiency. Next, count on its 650V...

HH75N120 IGBT: A Powerful and Versatile Solution The HH75N120 IGBT (Insulated Gate Bipolar Transistor) is a high-performance power semiconductor designed to meet the demands of modern power electronics applications. With...

KGF75N65 IGBT – 650V, 75A, TO-247 Package The KGF75N65 (also marked as 75N65KDF or KGF75N65KDF) is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for fast switching and high-efficiency power...

HH75N120HA IGBT 75A 1200V for Solar Inverters 📄 Product Description: The HH75N120HA is a high-performance Insulated Gate Bipolar Transistor (IGBT) rated at 1200 volts and 75 amps, built with trench-gate...

The GWA80H65DFB, also known by the ST part number STGWA80H65DFB, is a Trench Field‑Stop IGBT engineered for high-speed switching applications. Featuring an integrated ultra-fast soft recovery diode, this device offers...

NCE 75TD120: A Powerful and Versatile Solution The NCE 75TD120 IGBT (Insulated Gate Bipolar Transistor) is a high-performance power semiconductor designed to meet the demands of modern power electronics applications....

YGW75N65FP IGBT Power Transistor – 75A 650V TO-247 Module First, use the YGW75N65FP IGBT Power Transistor module for fast switching and high-voltage tasks. Next, rely on its 650V collector-emitter voltage...