1000 Search Results for: “switching speed”

1n4148, diode, switching diode, signal diode, small signal diode, high-speed diode, fast switching diode, general purpose diode, PN junction diode, semiconductor diode, electronic component, electronic device, circuit component, rectifier diode,...

Solid-state Relay 40A is an electronic switching device that switches conduction states when a small external voltage is Input voltage 3-32VDC. Applying for ON-OFF lamps, electric consumers 5-60VDC or DC...

EE33-1.5-15KW Solar Inverter Transformer - Buy Online in Pakistan Are you looking for a high-quality EE33-1.5-15KW Solar Inverter Transformer at an affordable price? hallroadlahore.pk  is your one-stop shop for all...

The HFS5N65S is a high-voltage N-Channel Power MOSFET designed for switching applications such as power supplies, inverters, and SMPS circuits. It uses advanced trench technology for efficient performance, fast switching,...

Description Marked "MJE13003G" on the package with UTC's logo, this is Unisonic Technologies' (UTC) MJE13003G (a variant of the 13003 family), a high-voltage, high-speed NPN silicon power bipolar junction transistor...

The IRF840 is an N-Channel Power MOSFET which can switch loads up to 500V. The Mosfet could switch loads that consume up to 8A, it can turn on by providing...

Description: 1.Universal for all cars, motorcycles, buses, boats, marine, trailers，kitchen appliance etc. 2.Rocker Switch,3 terminals ON/OFF/ON switch, , longer life for use. 3.Product soldering precautions: Any incorrect soldering operation may...

The GWA80H65DFB, also known by the ST part number STGWA80H65DFB, is a Trench Field‑Stop IGBT engineered for high-speed switching applications. Featuring an integrated ultra-fast soft recovery diode, this device offers...

IGBT G40T120BK3SD – High-Performance Power Transistor The IGBT G40T120BK3SD is a high-power Insulated Gate Transistor (IGBT). First, it supports 1200V and 40A applications, making it perfect for demanding tasks. Next,...

Description The HLF74HC147N is a 10-to-4 Line Priority Encoder IC manufactured by HLF, housed in a standard 16-pin DIP through-hole package. These high-speed Si-gate CMOS devices are pin-compatible with low...

G75H120DF1 IGBT - 75A 1200V High-Efficiency Power Transistor The G75H120DF1 is a high-performance 75A, 1200V (IGBT) designed for efficient power conversion and high-speed switching applications. It is widely used in motor drives,...

Product Name: CRMicro G40T120 IGBT TransistorBrand: CRMicro Description:The G40T120 is a high-performance IGBT (Insulated Gate Bipolar Transistor) from CRMicro, designed for fast switching and high-efficiency power applications. With a collector-emitter...

DescriptionMarked "TRS8A65F" on the package with Toshiba's logo, this is Toshiba's TRS8A65F, a Silicon Carbide (SiC) Schottky Barrier Diode from Toshiba Semiconductor. It's rated 650V/8A in a 2-pin (2+Tab) TO-220F-L...

FGA50N100BNTD2 – 1000 V, 50 A NPT Trench IGBT with Built-in Fast Diode, TO‑3P Package Product Description: The FGA50N100BNTD2 is a high-performance 1000V, 50A N-channel Insulated Gate Bipolar Transistor (IGBT) designed for...

UF4007 Ultra Fast Recovery Rectifier DiodeThe UF4007 is a high-performance ultra-fast recovery rectifier diode designed for applications requiring fast switching speeds and low power loss. With a 1A current rating...

FR107 Diode – Fast Recovery Rectifier The FR107 Diode is a fast recovery rectifier diode, widely used in switching power supplies (SMPS), high-frequency rectification, freewheeling diodes, and DC power conversion....

DESCRIPTIONThe UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.

FNIRSI DMC-100 is a 10,000-count high-precision intelligent clamp meter, covering 750V voltage and 600A current ultra-wide range, whether it is engineering maintenance, laboratory research, or vehicle overhaul, home electrical diagnostics,...

Description Marked "K40A10N1" on the package with Toshiba's logo, this is Toshiba's TK40A10N1, part of their U-MOS IV power transistor series. It is an N-channel enhancement mode MOSFET built in...

G60N100 IGBT: A Powerful and Versatile Solution The G60N100 IGBT (Insulated Gate Bipolar Transistor) is a high-performance power semiconductor designed to meet the demands of modern power electronics applications. With...

The Copy GW80H65 80H65 IGBT, part of our HB series, combines high-speed switching with low saturation voltage, making it an excellent choice for frequency converters. Features Advanced Structure: Developed using...

75V Single N-Channel HEXFET Power MOSFET is provided in a TO-220AB packageN CHANNEL POWER MOSFET Technical Specifications of IRFB3307 MOSFET: Casing: TO-220 VDSS 75V RDS(on) typ. 5.0m max. 6.3m ID...

The Device is a monolithic integrated high voltage, high current four channel driver designed to accept standard DTL or TTL logic levels and drive inductive loads (such as relays solenoids,...