353 Search Results for: “MOSFETs”

The IRF520 transistor load control driver module is used to connect up to 120W DC loads to an Arduino controller or other microprocessor control device. The module can perform switching function...

IR2110 / ir 2110 MOSFET & IGBT DRIVER ICFEATURES: Floating channel designed for bootstrap operation Fully operational to 500V or 600V Tolerant to negative transient voltage dV/dt immune Gate drive...

IRFZ44N POWER MOSFET Features: Type:Field-Effect Transistor Brand Name: International Rectifier Package Type: Throught Hole Model Number: IRFZ44NPBF TO-220AB: MOSFET N-Channel, Metal Oxide 55V 49A: FETs - Single Mosfet Type :...

This MOSFET is used in the conditionPackage Includes: 1 x GP 4063D Mosfet

TC4427A Dual High-Speed MOSFET Driver ICThe TC4427A is a high-performance dual MOSFET driver designed for high-speed switching applications. This versatile IC is ideal for driving power MOSFETs in motor control,...

Pin configuration isolated MOSFET driver TL250The pin layout of TLP250 is given below. It is clearly shown in the figure that led at the input stage and photodetector diode at...

IRF3205 N CHANNEL POWER MOSFETVDSS = 55VRDS(on) = 8.0mID = 110A

HY1920 MOSFET - High-Performance N-Channel Power Transistor The HY1920 MOSFET is a robust, high-efficiency N-Channel MOSFET, ideal for power applications requiring high current and voltage capabilities. It features a 200V drain-to-source voltage...

MOSFET NCE15T14: Elevate Your Electronic Designs The MOSFET NCE15T14 is a high-efficiency N-Channel enhancement mode power MOSFET, perfect for a wide range of electronic applications. With its low on-resistance and fast switching...

9N90 MOSFET | High Voltage N-Channel Power Transistor for Efficient Switching Applications The 9N90 MOSFET is a high-performance N-channel power transistor designed to handle high voltages with efficiency. It is widely used...

FEATURES• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs...

This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and use s an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability....

DESCRIPTIONThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for...

Description:The 800R4S0 Power MOSFET N-Channel is a reliable, high-speed switching transistor designed for efficient power conversion and control. Ideal for use in power supplies, inverters, motor drivers, and switching circuits,...

IRFP450 N CHANNEL POWER MOSFETVds max=500 V Rds< 0.4 Id =14 A

The IRF9540 is a P-channel power MOSFET designed for a wide range of applications. It features low on-resistance and fast switching speeds, making it suitable for use in various circuits...

Technical Specifications: Casing: TO-220 Voltage(max): 100V I(max): 180A Execution: N-Channel Type: IRFB 4110

IRFP260N CHANNEL POWER MOSFETVds max=200 V Rds< 0.4 Id =50 A

Specifications Technical parameters of Transistor 40N10 MOS-N-FET 100 V, 40 A, 0.04 Ohm, 160 W, TO220 Transistor type: N-MOSFET Maximum voltage drain-source Uds: 100 [V] Maximum drain current: 40 [A]...