224 Search Results for: “mosfets”

75V Single N-Channel HEXFET Power MOSFET is provided in a TO-220AB packageN CHANNEL POWER MOSFET Technical Specifications of IRFB3307 MOSFET: Casing: TO-220 VDSS 75V RDS(on) typ. 5.0m max. 6.3m ID...

60N60FD1 MOSFET - 600V 60A N-Channel Power Transistor The 60N60FD1 is a high-performance 600V 60A N-Channel MOSFET, optimized for power conversion, switching applications, and industrial automation. With low RDS(on) and high-speed switching...

VDSS = 200V RDS(on) = 0.075 ID = 30A

📝 Product Description The NCEP15T14 MOSFET is a powerful, high-performance N-channel enhancement-mode transistor designed for both low and high-power switching applications. With a maximum voltage rating of 150V, this compact...

Transistor Type: MOSFETTransistor Polarity: N Channel Drain Source Voltage, Vds: 200V Continuous Drain Current, Id: 18A On-Resistance, Rds(on): 150mohm Rds(on) Test Voltage, Vgs: 10V Drain Source On Resistance @ 10V: 150mohm...

This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance , provide superior...

BS170 N-Channel FET is enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. BS170 have been designed to minimize on-state resistance while provide rugged, reliable,...

The IRF840 is an N-Channel Power MOSFET which can switch loads up to 500V. The Mosfet could switch loads that consume up to 8A, it can turn on by providing...

DESCRIPTIONThird generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred...

The Nell IRF260 is a three-terminal silicon devicewith current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4...

HY1920 MOSFET - High-Performance N-Channel Power Transistor The HY1920 MOSFET is a robust, high-efficiency N-Channel MOSFET, ideal for power applications requiring high current and voltage capabilities. It features a 200V drain-to-source voltage...

MOSFET NCE15T14: Elevate Your Electronic Designs The MOSFET NCE15T14 is a high-efficiency N-Channel enhancement mode power MOSFET, perfect for a wide range of electronic applications. With its low on-resistance and fast switching...

IRFB 4115 Power MOSFET N channel

SpecificationValue Family IRF740 Channel Mode Enhancement Channel Type N Maximum Continuous Drain Current 10A Maximum Drain Source Resistance 0.55Ohm@10V Maximum Drain Source Voltage 400V Category Power MOSFET Maximum Gate Source...

DESCRIPTIONThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for...

📝 Product Description The IRLZ34N is a logic-level N-Channel MOSFET designed for high-efficiency switching and amplification in low-voltage circuits. With a drain current of 30A, low RDS(on) of 35mΩ, and...

FEATURESDynamic dV/dt Rating Repetitive Avalanche Rated P-Channel 175 C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC

IRF3205 N CHANNEL POWER MOSFETVDSS = 55VRDS(on) = 8.0mID = 110A

9N90 MOSFET | High Voltage N-Channel Power Transistor for Efficient Switching Applications The 9N90 MOSFET is a high-performance N-channel power transistor designed to handle high voltages with efficiency. It is widely used...

DESCRIPTIONThe UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.

This is IRF540N MOSFET N Channel Transistor  Hexfet Power Mosfet type. This is a general purpose and Specifications: Drain-Source Volt (Vds): 100V Drain-Gate Volt (Vdg): 100V Gate-Source Volt (Vgs): 20V Drain...

he 2N7000 is a widely available and popular part, often recommended as useful and common components to have around for hobbyist use, along with such other popular discrete semiconductors as...