29 Search Results for: “bjt”

A tip142 transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Bipolar NPN Transistor  is composed of semiconductor material usually with at least three...

The MJ13009 Transistor is a high-performance, NPN power transistor widely used in power switching applications, inverters, and amplifiers. Designed for reliability, the MJ13009 transistor ensures efficient performance in high-current and...

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three groups Q, R and S according to their DC current gain. On special...

DESCRIPTIONaP89341/170/085 series high performance Voice OTP is fabricated with Standard CMOS process with embedded 8M/4M/2M bits EPROM. It can store up to 341/170/85 sec voice message with 4-bit ADPCM compression...

The BC557 PNP Transistor is a versatile, general-purpose transistor widely used in switching and amplification applications by wide range of users mostly students. With its low noise and high performance,...

The BC107 is a small single NPN Transistor is age-old and have been used in low noise and low signal designs. Today a lot of new transistors have come as...

Type of transistor PNP Polarisation bipolar Collector-emitter voltage 160V Collector current 12A Power 0.1kW Mounting THT Frequency 15MHz

General purpose Silicon NPN transistorUsed for switching and amplification purposes is available in Pakistan.  The NPN transistor is geared towards passing electrons from the emitter to the collector (so that...

Max Voltage Collector Emmiter=100VMax Collector current=5A

Features Collector-Emitter Volt (Vceo): 50V Collector-Base Volt (Vcbo): 50V Collector Current (Ic): 0.15A hfe: 60-600 @ 1mA Power Dissipation (Ptot): 625mW Current-Gain-Bandwidth (ftotal): 60MHz Type: PNP

2SC1383 NPN TRANSISTORCharacteristics 2SC1383 bipolar transistor Type -n-p-n Collector-Emitter Voltage:25V Collector-Base Voltage:30V Emitter-Base Voltage:5?V Collector Current:1A Collector Dissipation -1W DC Current Gain (hfe) -85to?340 Transition Frequency -200MHz Operating and Storage...

LM311 COMPARATOR IC LM311 is a single high-speed voltage comparator IC. The IC basically offers a low-cost high-performance solution to conventional design issues & also possesses direct interfacing capability with almost...

The type was registered by Motorola Semiconductor in the mid-sixties, together with the complementary PNP type 2N3906, and represented a significant performance/cost improvement, with the plastic TO-92 case replacing metal...

TIP41C - PNP Power Transistors  is designed for general–purpose switching and amplifier applications. Collector–Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector–Emitter Sustaining Voltage —...

Characteristics of 2SC2625 Transistor Type - NPN Collector-Emitter Voltage: 400 V Collector-Base Voltage: 450 V Emitter-Base Voltage: 7 V Collector Current: 10 A Collector Dissipation - 80 W DC Current Gain (hfe) - 10 Operating and Storage Junction Temperature Range -55 to +150 °C...

DESCRIPTION·With TO-220 package ·Complement to type 2SA473 ·Collector current :IC=3A ·Collector dissipation:PC=10W@TC=25? APPLICATIONS ·Low frequency power amplifier ·Power regulator PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3...

The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. It is designed for low electric current and power and medium...

NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed high-voltage switching, and is ideal for use as a driver in devices...

TIP142 NPN DARLINGTON TRANSISTOR IN PAKISTANMax Voltage Collector Emmiter=100V Max Collector current =10A

The S9012 is a common PNP bipolar junction transistor used for general-purpose switching and amplification in electronic circuits. This component is suitable for various hobbyist and professional electronics projects requiring...

Characteristics of 2SA683 Transistor Type: PNP Collector-Emitter Voltage, max: -25 V Collector-Base Voltage, max: -30 V Emitter-Base Voltage, max: -5 V Collector Current − Continuous, max: -1 A Collector Dissipation: 1 W DC Current Gain (hfe): 85 to 340 Transition Frequency, min: 200 MHz Operating and...

Max Voltage Collector Emmiter=50 VMax Collector current=150 mA Collector power dissipation =400 mW