274 Search Results for: “MOSFET”

📝 Product Description The NCEP15T14 MOSFET is a powerful, high-performance N-channel enhancement-mode transistor designed for both low and high-power switching applications. With a maximum voltage rating of 150V, this compact...

75V Single N-Channel HEXFET Power MOSFET is provided in a TO-220AB packageN CHANNEL POWER MOSFET Technical Specifications of IRFB3307 MOSFET: Casing: TO-220 VDSS 75V RDS(on) typ. 5.0m max. 6.3m ID...

60N60FD1 MOSFET - 600V 60A N-Channel Power Transistor The 60N60FD1 is a high-performance 600V 60A N-Channel MOSFET, optimized for power conversion, switching applications, and industrial automation. With low RDS(on) and high-speed switching...

This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance , provide superior...

HY3215 TO‑247 MOSFET Transistor delivers 150 V and 130 A continuous current with ultra-low RDS(on) of ~0.014 Ω. This makes the HY3215 ideal for industrial inverters, welding machines, motor drivers, and high-efficiency DC-DC...

BS170 N-Channel FET is enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. BS170 have been designed to minimize on-state resistance while provide rugged, reliable,...

Transistor Type: MOSFETTransistor Polarity: N Channel Drain Source Voltage, Vds: 200V Continuous Drain Current, Id: 18A On-Resistance, Rds(on): 150mohm Rds(on) Test Voltage, Vgs: 10V Drain Source On Resistance @ 10V: 150mohm...

HY1920 MOSFET - High-Performance N-Channel Power Transistor The HY1920 MOSFET is a robust, high-efficiency N-Channel MOSFET, ideal for power applications requiring high current and voltage capabilities. It features a 200V drain-to-source voltage...

The IRF840 is an N-Channel Power MOSFET which can switch loads up to 500V. The Mosfet could switch loads that consume up to 8A, it can turn on by providing...

The Nell IRF260 is a three-terminal silicon devicewith current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4...

VDSS = 200V RDS(on) = 0.075 ID = 30A

DESCRIPTIONThird generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred...

📝 Product Description The IRLZ34N is a logic-level N-Channel MOSFET designed for high-efficiency switching and amplification in low-voltage circuits. With a drain current of 30A, low RDS(on) of 35mΩ, and...

9N90 MOSFET | High Voltage N-Channel Power Transistor for Efficient Switching Applications The 9N90 MOSFET is a high-performance N-channel power transistor designed to handle high voltages with efficiency. It is widely used...

SI2300DS 30V 3.6A N-Channel Mosfet – SOT-23 Package This N−Channel logic level enhancement mode field effect transistor is produced using on semi’s proprietary, high cell density, DMOS technology. This very...

he 2N7000 is a widely available and popular part, often recommended as useful and common components to have around for hobbyist use, along with such other popular discrete semiconductors as...

IRFB 4115 Power MOSFET N channel

This is IRF540N MOSFET N Channel Transistor  Hexfet Power Mosfet type. This is a general purpose and Specifications: Drain-Source Volt (Vds): 100V Drain-Gate Volt (Vdg): 100V Gate-Source Volt (Vgs): 20V Drain...

DESCRIPTIONThe UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.

Functions: RF1404 - ORIGINAL - IR  VOLTAGE - 40V  CURRENT - 190A  RDS_ON - 3.7m Ohm  ENCAPSULATION - TO220  Component widely used in sources of amplifiers of brands:  DB Sound...

FEATURES• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs...

The SVG104R5NT N-Channel Power MOSFET is a high-efficiency, fast-switching transistor designed for advanced electronic applications. With its low on-resistance, high voltage capacity, and excellent thermal performance, this MOSFET is perfect...