Description
Marked "K40A10N1" on the package with Toshiba's logo, this is Toshiba's TK40A10N1, part of their U-MOS IV power transistor series. It is an N-channel enhancement mode MOSFET built in a fully isolated TO-220SIS (TO-220F equivalent) plastic package, designed specifically for low-voltage, high-current switching applications.
It features an extremely low drain-source on-resistance ($R_{DS(ON)}$), low gate charge ($Q_g$), and excellent switching speed, making it exceptionally well-suited for efficient power conversion and motor drive circuits.
Key Specifications
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Type: N-Channel Enhancement Mode Power MOSFET (U-MOS IV)
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Manufacturer: Toshiba
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Package Marking: K40A10N1
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Package: TO-220SIS (Isolated 3-pin through-hole)
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Drain-Source Voltage ($V_{DSS}$): 100V
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Drain Current ($I_D$): 40A (Continuous, $T_C = 25^\circ\text{C}$)
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Pulsed Drain Current ($I_{DP}$): 120A
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Gate-Source Voltage ($V_{GSS}$): $\pm 20\text{V}$ max
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Gate Threshold Voltage ($V_{GS(th)}$): 2.0V to 4.0V
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$R_{DS(ON)}$, max: $0.0084\,\Omega$ ($8.4\,\text{m}\Omega$) at $V_{GS} = 10\text{V}$
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Power Dissipation ($P_D$): 35W
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Total Gate Charge ($Q_g$): 46nC (typ.)
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Max Channel Temperature: 150°C
Common Applications
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High-current DC-DC converters
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Switching regulators and power supplies (SMPS)
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Synchronous rectification in power systems
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Motor drives and battery management systems (BMS)
Package Includes
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1 x Toshiba TK40A10N1 N-Channel Power MOSFET (TO-220SIS)
