Description
Marked "K12A60W" on the package with Toshiba's logo (the "T" prefix is dropped in the on-body marking), this is Toshiba's TK12A60W, an N-channel MOSFET rated 600V with an on-resistance of 0.3Ω at 10V gate drive, built in the TO-220SIS package on Toshiba's DTMOSIV process. The isolated TO-220SIS outline simplifies mounting to a heatsink without a separate insulating pad.
Key features include a low typical drain-source on-resistance of RDS(ON) = 0.265Ω, achieved through a super junction structure (DTMOS), along with easy gate switching control and enhancement-mode operation. The gate threshold voltage is 2.7 to 3.7V (VDS = 10V, ID = 0.6mA). It's rated with a channel-to-case thermal resistance of 3.57°C/W and channel-to-ambient thermal resistance of 62.5°C/W, and weighs approximately 1.7g. As with other DTMOS-series parts, it's intended primarily for switching voltage regulator applications.
Key Specifications
- Type: N-Channel Enhancement Mode Power MOSFET (Super Junction / DTMOSIV)
- Manufacturer: Toshiba Semiconductor
- Package Marking: K12A60W
- Package: TO-220SIS (isolated), 3-pin (Gate, Drain, Source)
- Drain-Source Voltage (VDSS): 600V
- Gate-Source Voltage (VGSS): 30V
- Continuous Drain Current (ID): 11.5A
- RDS(ON), typical: 0.265Ω
- Gate Threshold Voltage (Vth): 2.7 to 3.7v
- Process: DTMOSIV (super junction structure)
- Package weight: ~1.7g
Common Applications
- Switching voltage regulators
- Offline SMPS and flyback converters
- General-purpose 600V-class power switching
Package Includes
- 1 x Toshiba TK12A60W N-Channel Power MOSFET (TO-220SIS)
