Description
Marked "104R5NT" on the package with the Silan ("SL") logo, this is Hangzhou Silan Microelectronics' SVG104R5NT, part of their LVMOS (low-voltage MOS) power MOSFET series. The SVG104R5NT(S)(F)(KL)(S6) is an N-channel enhancement mode power MOS field effect transistor produced using Silan's LVMOS technology, with an improved process and cell structure especially tailored to minimize on-state resistance and provide superior switching performance. It's widely used in UPS and power management applications.
This is a high-current, low-voltage MOSFET — the low 100V rating paired with a very low RDS(ON) and a massive 120A current capability makes it well suited for high-current, low-voltage switching stages like synchronous rectification and battery-related power circuits, rather than offline/mains-voltage applications.
Key Specifications
- Type: N-Channel Enhancement Mode Power MOSFET (LVMOS)
- Manufacturer: Hangzhou Silan Microelectronics
- Package Marking: 104R5NT
- Package: TO-220-3L, 3-pin, through-hole
- Drain-Source Voltage (VDS): 100V
- Drain Current (ID): 120A
- Gate-Source Voltage (VGS): 20V max
- Gate Threshold Voltage (Vgs(th)): 4V max
- RDS(ON), max: 0.0045Ω (4.5mΩ)
- Power Dissipation: 208W
- Total Gate Charge (Qg): 114nC
- Output Capacitance (Coss): 864pF
- Max Junction Temperature: 150°C
- Features: Improved dv/dt capability
Common Applications
- Uninterruptible Power Supplies (UPS)
- Power management applications
- High-current, low-voltage synchronous rectification
- Battery management and DC-DC converter switching stages
Package Includes
- 1 x Silan SVG104R5NT N-Channel Power MOSFET (TO-220-3L)
