Description
Marked "D3NK80Z" on the package with STMicroelectronics' logo, this is STMicroelectronics' STD3NK80Z (or STU3NK80Z), an 800V N-channel SuperMESH™ Power MOSFET. Produced using ST's high-voltage SuperMESH™ technology, it features low on-resistance ($R_{DS(ON)}$), high $dv/dt$ capability, and integrated Zener diodes across the gate-source for electrostatic discharge (ESD) protection.
Housed in a IPAK (TO-251) through-hole package (or DPAK style with straight leads), it is designed for compact, high-efficiency switching circuits.
Key Specifications
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Type: N-Channel Enhancement Mode Power MOSFET (SuperMESH™)
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Manufacturer: STMicroelectronics
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Package Marking: D3NK80Z / 0Z / 6K26HB47
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Package: TO-251 / IPAK (3-pin through-hole)
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Drain-Source Voltage ($V_{DSS}$): 800V
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Drain Current ($I_D$): 2.5A (Continuous, $T_C = 25^\circ\text{C}$)
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Pulsed Drain Current ($I_{DP}$): 10A
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Gate-Source Voltage ($V_{GSS}$): $\pm 30\text{V}$ max (ESD Protected via built-in Zener diodes)
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Gate Threshold Voltage ($V_{GS(th)}$): 3.0V to 4.5V
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$R_{DS(ON)}$, max: $4.5\,\Omega$ at $V_{GS} = 10\text{V}$
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Power Dissipation ($P_D$): 70W
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Max Junction Temperature: 150°C
Common Applications
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Switch-Mode Power Supplies (SMPS) for small offline adapters
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Auxiliary power supply stages
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High-voltage, low-power switching circuits
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Electronic ballasts for lighting
Package Includes
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1 x STMicroelectronics STD3NK80Z 800V 2.5A N-Channel Power MOSFET (TO-251 / IPAK)
