Description
Marked "N190R65" on the package with AUK Semiconductor's logo, this is AUK's N190R65 (such as SCN190R65F / STN190R65F), a 650V N-channel Super Junction Power MOSFET. Built using advanced super junction technology, it offers an extremely low state-on resistance ($R_{DS(ON)}$), low gate charge ($Q_g$), and fast switching performance designed to maximize efficiency in high-voltage power conversion circuits.
Housed in an isolated TO-220F package, it provides internal electrical isolation for safe, direct mounting onto heat sinks without needing extra insulating washers.
Key Specifications
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Type: N-Channel Enhancement Mode Super Junction Power MOSFET
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Manufacturer: AUK Semiconductor
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Package Marking: N190R65 / H41215F
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Package: TO-220F (Isolated 3-pin through-hole)
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Drain-Source Voltage ($V_{DSS}$): 650V
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Drain Current ($I_D$): 20A (Continuous, $T_C = 25^\circ\text{C}$)
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Pulsed Drain Current ($I_{DP}$): 60A
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Gate-Source Voltage ($V_{GSS}$): $\pm 30\text{V}$ max
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Gate Threshold Voltage ($V_{GS(th)}$): 2.5V to 4.5V
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$R_{DS(ON)}$, max: $0.190\,\Omega$ ($190\,\text{m}\Omega$) at $V_{GS} = 10\text{V}$
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Power Dissipation ($P_D$): 34W
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Max Junction Temperature: 150°C
Common Applications
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Switch-Mode Power Supplies (SMPS)
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Power Factor Correction (PFC) boost stages
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Server, telecom, and industrial power supplies
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High-efficiency DC-DC converters and battery charging systems
Package Includes
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1 x AUK N190R65 650V 20A N-Channel Super Junction Power MOSFET (TO-220F)
