Description
Marked "MJE13003G" on the package with UTC's logo, this is Unisonic Technologies' (UTC) MJE13003G (a variant of the 13003 family), a high-voltage, high-speed NPN silicon power bipolar junction transistor (BJT). It is engineered specifically for high-voltage, fast-switching power applications, featuring low collector-emitter saturation voltage and robust reverse-bias safe operating area (RBSOA).
Housed in a TO-126 package with a metal mounting tab, it provides reliable power handling and heat dissipation for off-line power switching and electronic ballast circuits.
Key Specifications
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Type: High-Voltage Fast-Switching NPN Power BJT Transistor
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Manufacturer: UTC (Unisonic Technologies Co., Ltd.)
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Package Marking: MJE13003G / P01SHTX
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Package: TO-126 (3-pin through-hole with mounting tab)
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Collector-Base Voltage ($V_{CBO}$): 700V
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Collector-Emitter Voltage ($V_{CEO}$): 400V
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Emitter-Base Voltage ($V_{EBO}$): 9V
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Collector Current ($I_C$): 1.5A (Continuous), 3.0A (Peak)
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Base Current ($I_B$): 0.75A max
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Collector-Emitter Saturation Voltage ($V_{CE(sat)}$), max: $0.5\text{ V}$ at $I_C = 0.5\text{ A}, I_B = 0.1\text{ A}$
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Power Dissipation ($P_D$): 20W ($T_C = 25^\circ\text{C}$)
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DC Current Gain ($h_{FE}$): 8 to 40
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Operating Junction Temperature Range: $-55^\circ\text{C}$ to $+150^\circ\text{C}$
Common Applications
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Electronic ballasts for Compact Fluorescent Lamps (CFL) and tube lights
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Switch-Mode Power Supplies (SMPS) and low-power flyback converters
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Battery chargers and AC-DC power adapters
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High-voltage, high-speed power switching and inductive load drivers
Package Includes
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1 x UTC MJE13003G 700V 1.5A NPN Power Transistor (TO-126)
