This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and use s an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics of IGBT MOSFET result in inefficient operations at high frequencies.Co–packaged IGBT’s save space, reduce assembly time and cost.Features And Specifications Of MGW20N60D IGBT MOSFET Power Transistor:
Type Designator: MGW20N60D
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 142W
Maximum Collector-Emitter Voltage |Vce|, V: 600V
Collector-Emitter saturation Voltage |Vcesat|, V: 2.3V
Maximum Gate-Emitter Voltage |Veg|, V: 20V
Maximum Collector Current |Ic|, A: 20A
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 59
Maximum Collector Capacity (Cc), pF: 2280pF
High Short Circuit Capability
Soft Recovery Free Wheeling Diode is included in the package
MGW20N60D DataSheet
Package Include:
1 x MGW20N60D IGBT IC
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