This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
Type
Power MOSFET
Number of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-Source On-Res
1.4Ohm
Drain-Source On-Volt
900V
Gate-Source Voltage (Max)
±30V
Continuous Drain Current
9A
Power Dissipation
150W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-3PN
Packaging
Tape and Reel
Package Include:
1xK2611
Datasheet PDF Download :
