Description
Marked "045N10N" on the package with Infineon's logo, this is Infineon's IPP045N10N3G (also available as IPB045N10N3G/IPI045N10N3G variants), part of their OptiMOS3 power transistor family. It's an N-channel MOSFET built for low-voltage, high-current switching applications, featuring an excellent gate charge × RDS(ON) product (figure of merit), very low on-resistance, a 175°C maximum operating temperature, and Pb-free/RoHS-compliant lead plating.
The OptiMOS3 process is optimized to minimize conduction and switching losses simultaneously, making this part well suited for high-efficiency, high-current DC-DC conversion and synchronous rectification applications where both low RDS(ON) and fast switching are needed.
Key Specifications
- Type: N-Channel Enhancement Mode Power MOSFET (OptiMOS3)
- Manufacturer: Infineon Technologies
- Package Marking: 045N10N
- Package: TO-220, 3-pin, through-hole
- Drain-Source Voltage (VDS): 100V
- Drain Current (ID): 100A
- Gate-Source Voltage (VGS): 20V max
- Gate Threshold Voltage (VGS(th)): 3.5V max
- RDS(ON), max: 0.0045Ω (4.5mΩ)
- Power Dissipation: 214W
- Total Gate Charge (Qg): 88nC
- Output Capacitance (Coss): 1210pF
- Max Junction Temperature: 175°C
Common Applications
- High-current, low-voltage DC-DC converters
- Synchronous rectification
- Battery-powered and high-efficiency switching power supplies
- Motor drive circuits requiring low conduction loss
Package Includes
- 1 x Infineon IPP045N10N3G N-Channel Power MOSFET (TO-220)
