Description
Marked "FQP3P50" on the package with ON Semiconductor's (Fairchild) logo, this is ON Semiconductor's FQP3P50, a -500V P-channel enhancement mode QFET® power MOSFET. Produced using proprietary planar stripe and DMOS technology, it is engineered to deliver low on-state resistance, fast switching performance, and high avalanche energy withstand capability.
Housed in a standard TO-220 package with a metal mounting tab, it provides excellent thermal dissipation for high-voltage switching circuits requiring P-channel high-side switching or control.
Key Specifications
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Type: P-Channel Enhancement Mode Power MOSFET (QFET®)
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Manufacturer: ON Semiconductor (onsemi) / Fairchild
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Package Marking: FQP 3P50 / 1J43AR
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Package: TO-220 (3-pin through-hole with metal tab)
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Drain-Source Voltage ($V_{DSS}$): -500V
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Drain Current ($I_D$): -2.7A (Continuous, $T_C = 25^\circ\text{C}$)
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Pulsed Drain Current ($I_{DP}$): -10.8A
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Gate-Source Voltage ($V_{GSS}$): $\pm 30\text{V}$ max
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Gate Threshold Voltage ($V_{GS(th)}$): -3.0V to -5.0V
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$R_{DS(ON)}$, max: $4.9\,\Omega$ at $V_{GS} = -10\text{V}$
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Power Dissipation ($P_D$): 85W
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Total Gate Charge ($Q_g$): 18nC (typ.)
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Max Junction Temperature: 150°C
Common Applications
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High-side switching in high-voltage DC-DC converters
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Switch-Mode Power Supplies (SMPS)
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Active clamp and snubber circuits
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Electronic ballasts and power control circuits
Package Includes
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1 x ON Semiconductor FQP3P50 -500V -2.7A P-Channel Power MOSFET (TO-220)
