Features:Floating channel designed for bootstrap operationFully operational to 600VTolerant to negative transient voltagedV/dt immuneGate drive supply range from 10 to 20VUndervoltage lockout3.3V, 5V and 15V logic compatibleCross-conduction prevention logicMatched propagation...

IR2110 / ir 2110 MOSFET & IGBT DRIVER ICFEATURES: Floating channel designed for bootstrap operation Fully operational to 500V or 600V Tolerant to negative transient voltage dV/dt immune Gate drive...

Description:The IR2153 is a high voltage, high speed, self-oscillating power MOSFET and IGBT driver with both high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies...

IR2181STRPBF IRS2181 S2181 SOP8IRS2181 High and Low Side Driver, SoftTurn-On, Noninverting Inputs, Separate High and Low Side Inputs in a 8-Lead package Benefits: Floating channel designed for bootstrap operation Fully...

DESCRIPTIONThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for...

The Nell IRF260 is a three-terminal silicon devicewith current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4...

VDSS =100VRDS(on) = 0.023 ID = 57A

The IRF520 transistor load control driver module is used to connect up to 120W DC loads to an Arduino controller or other microprocessor control device. The module can perform switching function...

Transistor Type: MOSFETTransistor Polarity: N Channel Drain Source Voltage, Vds: 200V Continuous Drain Current, Id: 18A On-Resistance, Rds(on): 150mohm Rds(on) Test Voltage, Vgs: 10V Drain Source On Resistance @ 10V: 150mohm...

FEATURES• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs...

SpecificationValue Family IRF740 Channel Mode Enhancement Channel Type N Maximum Continuous Drain Current 10A Maximum Drain Source Resistance 0.55Ohm@10V Maximum Drain Source Voltage 400V Category Power MOSFET Maximum Gate Source...

DESCRIPTIONThird generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred...

The IRF840 is an N-Channel Power MOSFET which can switch loads up to 500V. The Mosfet could switch loads that consume up to 8A, it can turn on by providing...

DESCRIPTIONThird generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred...

FEATURESDynamic dV/dt Rating Repetitive Avalanche Rated P-Channel 175 C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC

75V Single N-Channel HEXFET Power MOSFET is provided in a TO-220AB packageN CHANNEL POWER MOSFET Technical Specifications of IRFB3307 MOSFET: Casing: TO-220 VDSS 75V RDS(on) typ. 5.0m max. 6.3m ID...

Technical Specifications: Casing: TO-220 Voltage(max): 100V I(max): 180A Execution: N-Channel Type: IRFB 4110

IRFB 4115 Power MOSFET N channel

IRFP450 N CHANNEL POWER MOSFETVds max=500 V Rds< 0.4 Id =14 A