A1015 Pnp Transistor

Features and Technical Specifications

• Type: p-n-p
• Power Dissipation: 0.4watts
• High voltage and High current: Vceo = 50v and Ic = 150mA
• Low Noise: 1dB
• Case Material: molded plastic
• Collector power dissipation: 400mW
• DC current gain: 400
• Collector Emitter and Collector Base breakdown voltage: 50Vdc
• Base Emitter Saturation Voltage: 1.1Vdc
• Collector Emitter Saturation Voltage: 0.3Vdc
• Base Emitter voltage: 1.45Vdc
• Complementary to 2SC1815
• Operating Temperature and Storage Temperature: -55℃ to +150℃

 A1015 Equivalent Transistors

NTE290A, 2SA495, 2SA561, 2SA564A, 2SA573, 2SA675, 2SA705, 2SA850, 2SA999, KTA1015, BC212, BC257, BC307, BC557, 2N3494, 2SA781, KT3108A