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2N3055 is a general purpose NPN power transistor manufactured with the epitaxial base process, mounted in a hermetically sealed metal case. The device is designed for general purpose switching and amplifier applications.
2N3055 Pin Configuration
Like any other transistor 2N3055 has three pins namely EMITTER, BASE and COLLECTOR. The pin configuration of 2N3055 is given below.
Pin Number | Pin Name | Description |
1 | Base (B) | Normally used as trigger to turn ON the transistor |
2 | Emitter (E) | Normally connected to GROUND |
TAB or CASE | Collector (C) | Normally connected to LOAD |
2N3055 Features and Specifications
- Medium power transistor
- Excellent safe operating area
- Complementary NPN - PNP transistors
- Low collector-emitter saturation voltage
- Pb−free packages are available
- DC current gain (hFE) up to 70
- With hfe improved linearity
- Maximum voltage across collector and emitter: 60V DC
- Maximum current allowed trough collector: 15A DC
- Maximum voltage across base and emitter: 7V DC
- Maximum current allowed through base: 7A DC
- Maximum voltage across collector and base: 100V DC
- Operating temperature range: -65ºC to +200ºC
- Total power dissipation: 115W
2N3055 Equivalents
2N6673, 2N6675, complementary pair- MJ2955
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